Strained Silicon Nanowire Transistors With Germanium Source and Drain Stressors

被引：3

作者：

Liow, Tsung-Yang ^{[1
,2
]}

Tan, Kian-Ming ^{[1
]}

Lee, Rinus Tek Po ^{[1
]}

Zhu, Ming ^{[1
]}

Tan, Ben Lian-Huat ^{[2
]}

Balasubramanian, N. ^{[2
]}

Yeo, Yee-Chia ^{[1
,2
]}

机构：

[1] Natl Univ Singapore, Dept Elect & Comp Engn, Singapore 119260, Singapore

[2] ASTAR, Inst Microelect, Singapore 117685, Singapore

来源：

IEEE TRANSACTIONS ON ELECTRON DEVICES | 2008年 / 55卷 / 11期

关键词：

Germanium stressors; silicon-germanium stressors; strained silicon nanowires;

D O I：

10.1109/TED.2008.2005153

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

We report the first demonstration of pure germanium (Ge) source/drain (S/D) stressors on the ultranarrow or ultrathin Si S/D regions of nanowire FETs with gate lengths down to 5 nm. Ge S/D compressively strains the channel to provide up to similar to 100% IDsat enhancement. We also introduce a novel Melt-Enhanced Dopant diffusion and activation technique to form fully embedded Si0.15Ge0.85 S/D stressors in nanowire FETs, further boosting the channel strain and achieving similar to 125% I-Dsat enhancement.

引用

页码：3048 / 3055

页数：8

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