A magnetometry study of Co oxidation in Co/MgO bilayers grown by sputtering

被引：7
作者：
Lu, Y.
Deranlot, C.
Vaures, A.
Petroff, F.
George, J-M. [1 ]
机构：
[1] CNRS Thales, Unite Mixte Phys, RD 128, F-91767 Palaiseau, France
来源：
JOURNAL OF APPLIED PHYSICS | 2008年 / 104卷 / 07期
关键词：
D O I：
10.1063/1.2991167
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
One of the critical challenges during fabrication of magnetic tunnel junctions is to avoid the magnetic bottom electrode oxidation, considered as a spin depolarization source that lowers the tunneling magnetoresistance effect. In this paper, we present a study of the magnetic properties of Co/MgO bilayers as a function of several sputtering growth parameters by using a superconducting quantum interference device magnetometer. We demonstrate the high sensitivity of the magnetic properties to the oxidation of the Co layer and identify the relevant parameters to optimize the MgO growth process. (c) 2008 American Institute of Physics. [DOI: 10.1063/1.2991167]
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页数：5
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