EBIC and DLTS study of deformation induced defect thermal stability in n-Si

被引：1
|
作者：
Feklisova, OV [1 ]
Yakimov, EB [1 ]
机构：
[1] Russian Acad Sci, Inst Microelect Technol, Chernogolovka 142432, Russia
来源：
GETTERING AND DEFECT ENGINEERING IN SEMICONDUCTOR TECHNOLOGY XI | 2005年 / 108-109卷
关键词：
dislocation; silicon; EBIC; DLTS; annealing;
D O I：
10.4028/www.scientific.net/SSP.108-109.567
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
The electrical properties of deformation-induced defects in n-Si with a high dislocation density (10(8)-10(9) cm(-2)) and their annealing behaviour in the temperature range from 600 to 800 degrees C have been studied. Special attention was paid to revealing the oxygen role in the annealing processes. It is shown that the diffusion length in deformed Si starts to restore at 800 degrees C while the deep level concentration decreases even after 600 degrees C annealing. No direct correlation between oxygen gettering by deformation-induced defects and their electrical property annealing is revealed.
引用
收藏
页码：567 / 570
页数：4
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