The defect nature of photoluminescence from a porous silicon nanowire array

被引：13

作者：

Yu, Qianqian ^{[1
]}

He, Haiping ^{[1
]}

Gan, Lu ^{[1
]}

Ye, Zhizhen ^{[1
]}

机构：

[1] Zhejiang Univ, Sch Mat Sci & Engn, State Key Lab Silicon Mat, Hangzhou 310027, Zhejiang, Peoples R China

来源：

RSC ADVANCES | 2015年 / 5卷 / 98期

关键词：

QUANTUM DOTS; NANOCRYSTALS; LUMINESCENCE; NANOPARTICLES; FILMS; SIZE;

D O I：

10.1039/c5ra13820e

中图分类号：

O6 [化学];

学科分类号：

0703 ;

摘要：

We carried out comprehensive steady-state and time-resolved photoluminescence (PL) studies to elucidate the origin of luminescence from a porous Si nanowire array prepared by metal-assisted chemical etching. We provide evidence for the defect nature of the PL, and ascribe it to donor-acceptor pair recombination. A schematic energy-level diagram is proposed to interpret the overall PL features.

引用

收藏

页码：80526 / 80529

页数：4

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