Modelling of removal characteristics and surface morphology formation in capacitively coupled atmospheric pressure plasma processing of fused silica optics

被引：12

作者：

Li, Duo ^{[1
]}

Li, Na ^{[1
]}

Su, Xing ^{[1
]}

Liu, Kan ^{[1
]}

Ji, Peng ^{[1
]}

Wang, Bo ^{[1
]}

机构：

[1] Harbin Inst Technol, Ctr Precis Engn, 92 West Dazhi St, Harbin 150001, Heilongjiang, Peoples R China

来源：

OPTICAL MATERIALS EXPRESS | 2019年 / 9卷 / 04期

基金：

中国国家自然科学基金;

关键词：

Atmospheric pressure plasmas - Capacitively coupled - Discharge characteristics - In-depth understanding - Morphology formation - Multiphysics simulations - Removal characteristics - Surface chemical reactions;

D O I：

10.1364/OME.9.001893

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

Capacitively coupled atmospheric pressure plasma processing (CCAPPP) has been developed as a sub-aperture figuring tool for high precision fused silica optics, due to deterministic high rate material removal, small tool spot and no induced subsurface damage. In order to carry out an in-depth understanding on the removal and surface morphology formation mechanism of CCAPPP, this study aims to model the plasma discharge process and surface chemical reaction using the multi-physics simulation. The discharge characteristics such as electron density, electron temperature and particle density in the plasma are firstly obtained. Reaction gas components (CF4 and O-2) are also added, and the main chemical reactions are analyzed by zero-dimensional modelling. Then the distribution of active atoms (active F atoms, O atoms and CFx molecules) related to the removal process is simulated in the full CCAPPP model. Finally, experiments are carried out to verify the simulation results, indicating that the distribution of active F atoms on the workpiece surface determines the Gaussian removal profile and the ratio of O/CFx is the key factor affecting the surface morphology formation of CCAPPP. (C) 2019 Optical Society of America under the terms of the OSA Open Access Publishing Agreement

引用

页码：1893 / 1906

页数：14

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