Power cycling on press-pack IGBTs: measurements and thermomechanical simulation

被引:24
作者
Cova, P
Nicoletto, G
Pirondi, A
Portesine, M
Pasqualetti, M
机构
[1] Univ Parma, Dipartimento Ingn Informaz, I-43100 Parma, Italy
[2] Univ Parma, Dipartimento Ingn Ind, I-43100 Parma, Italy
[3] Ansaldo Trasporti, Unita Semicond, I-16152 Genoa, Italy
关键词
D O I
10.1016/S0026-2714(99)00166-3
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
Press-pack IGBTs are increasing their market-share, especially for traction applications. As packaging performance is a key factor for a successful product, there is a great interest in defining optimal solutions in terms of geometry, materials and mechanical loading. To support IGBT reliability assessment we developed a testing rig for accelerated testing of a single chip under controlled pressure conditions. In parallel, we created a thermomechanical simulation of the chip/testing rig assembly for the determination of internal stresses and strains due to actual operation. Test results and preliminary failure analysis following power cycling show the possibility of predicting the degradation according to different mechanisms induced by the combined effect of pressure and temperature fluctuation. (C) 1999 Elsevier Science Ltd. All rights reserved.
引用
收藏
页码:1165 / 1170
页数:6
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