Electrical conduction mechanism in Se90-xTe5Sn5Inx (x=0, 3, 6 and 9) multi-component glassy alloys

被引:12
作者
Sen Ram, Indra [1 ]
Kumar, Sunil [2 ]
Singh, Rajesh Kumar [3 ]
Singh, Prabhakar [3 ]
Singh, Kedar [4 ,5 ]
机构
[1] Univ Delhi, Dept Phys, Dyal Singh Coll, New Delhi 110003, India
[2] Dr RML Govt Degree Coll, Dept Phys, Bareilly 243301, Uttar Pradesh, India
[3] Banaras Hindu Univ, Dept Phys, Indian Inst Technol, Varanasi 221005, Uttar Pradesh, India
[4] Banaras Hindu Univ, Dept Phys, Varanasi 221005, Uttar Pradesh, India
[5] Jawaharlal Nehru Univ, Sch Phys Sci, New Delhi 110067, India
来源
AIP ADVANCES | 2015年 / 5卷 / 08期
关键词
AMORPHOUS THIN-FILMS; INDUCED CRYSTALLIZATION PHENOMENA; GETE-BASED ALLOYS; CHALCOGENIDE GLASSES; DIELECTRIC-RELAXATION; THERMAL-STABILITY; KINETICS; IRRADIATION; TRANSITION; NUCLEATION;
D O I
10.1063/1.4929577
中图分类号
TB3 [工程材料学];
学科分类号
0805 ; 080502 ;
摘要
Electrical conductivity of Se90-xTe5Sn5Inx (x = 0, 3, 6 and 9) glassy systems was studied employing impedance spectroscopic technique in the frequency range 100 Hz to 1 MHz and in the temperature range 308-388 K. The DC conductivity (sigma(dc)) at each temperature was evaluated from the low frequency plateau region for all the samples under investigation. The bulk conductivity for each sample was also evaluated from Nyquist impedance plots. The semicircle shape of Nyquist plot exhibit dipolar nature of samples. The activation energy for glassy, amorphous and crystalline region from the Arrhenius plot of the DC conductivity and bulk conductivity was evaluated. From the results it is found that activation energy varied from 0.091 to 0.194 eV in glassy, 0.686 to 0.002 eV in amorphous and 0.215 to 0.503 eV in crystalline region. The activation energy (Delta E) from DC conductivity and bulk conductivity found to be close in corresponding regions. The pre-exponential factor was also calculated for all three regions. (C) 2015 Author(s).
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页数:7
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