An a-IGZO TFT Pixel Circuit with Improved Current Mirror for Active Matrix Organic Light Emitting Diode Displays

被引:0
作者
Liu, Lilin [1 ]
Sun, Kun [1 ]
Zhang, Xiangying
Teng, Dongdong [2 ]
Wang, Gang [1 ]
机构
[1] Sun Yat Sen Univ, Sch Elect & Informat Engn, State Key Lab Optoelect Mat & Technol, Guangzhou, Guangdong, Peoples R China
[2] Sun Yat Sen Univ, Sch Phys, Guangzhou, Guangdong, Peoples R China
来源
2016 17TH INTERNATIONAL CONFERENCE ON ELECTRONIC PACKAGING TECHNOLOGY (ICEPT) | 2016年
关键词
Active matrix organic light emitting diode (AMOLED); amorphous indium-gallium-zinc oxide (a-IGZO); thin-film transistor (TFT); current programmed pixel circuit (CPPC); channel length modulation effect; THRESHOLD-VOLTAGE;
D O I
暂无
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
Active matrix organic light emitting diode (AMOLED) displays based on amorphous indium-gallium-zinc oxide thin-film transistor (a-IGZO TFT) pixel circuit encounter problems as instability of threshold voltage (VT) under gate voltage bias-stress, the non-uniformity of mobility (11) resulting from the large area TFT scale fabrication, and OLED degradation, etc. In this paper, we proposed a current compensation method. An improved current mirror is designed to overcome the channel length modulation effect of TFTs. The SPICE simulation results show that the proposed scheme not only effectively compensates for non-uniformity related with deviations of VT and 11 in a-IGZO TFTs, the OLED degradation, but also guarantees a good linearity between IDATA and IOLED.
引用
收藏
页码:1235 / 1239
页数:5
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