GROWTH OF Cu2ZnSn(S,Se)4 THIN FILMS BY A SIMPLE ECO-FRIENDLY SOLUTION ROUTE METHOD

被引:7
作者
Zhang, H. [1 ]
Li, Z. Q. [1 ]
Chen, Y. R. [1 ]
Li, J. J. [1 ]
Sun, Z. [1 ]
Yang, Z. [2 ]
Huang, S. M. [1 ]
机构
[1] E China Normal Univ, Engn Res Ctr Nanophoton & Adv Instrument, Minist Educ, Dept Phys, Shanghai 200062, Peoples R China
[2] Shanghai Jiao Tong Univ, Key Lab Thin Film & Microfabricat, Minist Educ, Res Inst Micro Nano Sci & Technol, Shanghai 200240, Peoples R China
基金
中国国家自然科学基金;
关键词
Cu2ZnSn(S; Se)(4); solution; sulfurization; selenization; thin film solar cells; SOLAR-CELLS; CU2ZNSNSE4; PRECURSORS; ABSORBER;
D O I
10.1142/S0218625X12500345
中图分类号
O64 [物理化学(理论化学)、化学物理学];
学科分类号
070304 ; 081704 ;
摘要
A simple and hydrazine-free solution-based approach for depositing Cu2ZnSnS4 (CZTS) and Cu2ZnSn(S,Se)(4) (CZTSSe) absorber layers is reported. The process involves incorporating metal salts (Cu(CH3COO)(2), Zn(CH3COO)(2), SnCl2) and thiourea into a single pyridine-based solution, spin-coating a precursor film, and sulfurizing with sulfur powders or selenizing using Se pellets in an inert atmosphere, to form the desired CZTS or CZTSSe films. X-ray diffraction and Raman spectra studies show that kesterite CZTS and CZTSSe are formed after sulfurization and selenization, respectively. The selenized CZTSSe displays higher crystallinity than the sulfurized CZTS. Photovoltaic devices (glass/Mo/CZTSSe/CdS/i-ZnO/n-ZnO/A) employing the solution precursor selenized at 500 degrees C have yielded power conversion effciency of 1.44% under AM 1.5 illumination.
引用
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页数:8
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