FGMOS transistor based low voltage and low power fully programmable Gaussian function generator

被引:12
作者
Srivastava, Richa [1 ]
Gupta, Maneesha [1 ]
Singh, Urvashi [1 ]
机构
[1] NSIT, Elect & Commun Engn Dept, New Delhi, India
关键词
Low voltage; Low power; Gaussian function generator; FGMOS; Current mirror; CHARGE;
D O I
10.1007/s10470-013-0207-7
中图分类号
TP3 [计算技术、计算机技术];
学科分类号
0812 ;
摘要
In this paper floating gate MOS (FGMOS) transistor based fully programmable Gaussian function generator (GFG) is presented. The circuit combines the exponential characteristics of MOS transistor in weak inversion, tunable property of FGMOS transistor, and its square law characteristic in strong inversion region to implement the GFG. FGMOS based squarer is the core sub circuit of GFG that helps to implement full Gaussian function for positive as well as negative half of the input voltage. FGMOS implementation of the circuit provides low voltage operation, low power consumption, reduces the circuit complexity and increases the tunability of the circuit. The performance of circuit is verified at 0.75 V in TSMC 0.18 mu m CMOS, BSIM3 and level 49 technology by using Cadence Spectre simulator. To ensure robustness of the proposed GFG, simulation results for various process corner variations have also been included.
引用
收藏
页码:245 / 252
页数:8
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