Effect of B2O3 and CuO additives on the sintering temperature and microwave dielectric properties of Ba(Zn1/3Nb2/3)O3 ceramics

被引:82
|
作者
Kim, Min-Han
Jeong, Young-Hun
Nahm, Sahn
Kim, Hyo-Tae
Lee, Hwack-Joo
机构
[1] Korea Univ, Dept Mat Sci & Engn, Seoul 136701, South Korea
[2] Korea Inst Ceram Engn & Technol, Seoul 153801, South Korea
[3] Korea Stand Res Inst, New Mat Evaluat Ctr, Taejon, South Korea
关键词
microstructure; dielectric properties; Ba(Zn1/3Nb2/3)O-3;
D O I
10.1016/j.jeurceramsoc.2005.09.072
中图分类号
TQ174 [陶瓷工业]; TB3 [工程材料学];
学科分类号
0805 ; 080502 ;
摘要
The B2O3 added Ba(Zn1/3Nb2/3)O-3 (BBZN) ceramic was sintered at 900 degrees C. BaB4O7, BaB2O4, and BaNb2O6 second phases were found in the BBZN ceramic. Since BaB4O7 and BaB2O4 second phases have an eutectic temperature around 900 degrees C, they might exist as the liquid phase during sintering at 900 degrees C and assist the densification of the BZN ceramics. Microwave dielectric properties of dielectric constant (epsilon(r)) = 32, Q x f = 3500 GHz, and temperature coefficient of resonance frequency (tau(f)) = 20 ppm/degrees C were obtained for the BZN with 5.0 mol% B2O3 sintered at 900 degrees C for 2 h. The BBZN ceramics were not sintered below 900 degrees C and the microwave dielectric properties of the BBZN ceramics sintered at 900 degrees C were very low. However, when CuO was added, BBZN ceramic was well sintered even at 875 degrees C. The liquid phase related to the BaCu(B2O5) second phase could be responsible for the decrease of sintering temperature. Good microwave dielectric properties of epsilon(r) = 36, Q x f = 19,000 GHz and tau(f) = 21 ppm/degrees C can be obtained for CuO doped BBZN ceramics sintered at 875 degrees C for 2 h. (c) 2005 Elsevier Ltd. All rights reserved.
引用
收藏
页码:2139 / 2142
页数:4
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