[1] Royal Inst Technol, Dept Microelect & Appl Phys, SE-16440 Kista, Sweden
来源:
ICTON 2008: PROCEEDINGS OF 2008 10TH ANNIVERSARY INTERNATIONAL CONFERENCE ON TRANSPARENT OPTICAL NETWORKS, VOL 2
|
2008年
关键词:
D O I:
10.1109/ICTON.2008.4598579
中图分类号:
TP3 [计算技术、计算机技术];
学科分类号:
0812 ;
摘要:
The talk will address fabrication and characterization of InP-based two-dimensional (2D) photonic crystals (PhCs). The emphasis will be on material and processing issues. In particular, high aspect ratio etching of PhCs in the InP-based materials will be discussed, including feature-size dependent etching and its impact on the optical properties of PhCs. The physical basis for modification of carrier lifetimes of quantum wells in etched PhCs due to the so-called accumulated side-wall damage and methods to control carrier lifetimes relevant for emitter and switching applications will be discussed. Fundamental investigations of carrier transport across PhC structures will be reported and a new method to determine the etched side-wall Surface potential will be demonstrated.