Verification of surface polarity of O-face ZnO(000(1)over-bar) by quantitative modeling analysis of Auger electron spectroscopy

被引:5
作者
Su, C. W. [1 ]
Huang, M. S. [1 ]
Tsai, T. H. [1 ]
Chang, S. C. [1 ]
机构
[1] Natl Chiayi Univ, Dept Electrophys, Chiayi 60004, Taiwan
关键词
Structure of clean surfaces; Polarity surfaces; Quantitative spectra analysis; Auger electron spectroscopy; MOLECULAR-BEAM EPITAXY; ZINC-OXIDE; ZNO; CRYSTALS; GROWTH;
D O I
10.1016/j.apsusc.2012.09.023
中图分类号
O64 [物理化学(理论化学)、化学物理学];
学科分类号
070304 ; 081704 ;
摘要
Is crystalline ZnO(000 (1) over bar) O-face surface believed to be enriched by Zn atoms? This study may get the answer. We proposed a simplified model to simulate surface concentration ratio on (000 (1) over bar)-O or (0001)-Zn surface based on the hard-sphere model. The simulation ratio was performed by integrating electron signals from the assumed Auger emission, in which the electron mean free path and relative atomic layer arrangements inside the different polarity ZnO crystal surface were considered as relevant parameters. After counting more than 100 experimental observations of Zn/O ratios, the high frequency peak ratio was found at around 0.428, which was near the value predicted by the proposed model using the IMFP database. The ratio larger than the peak value corresponds to that observed in the annealed samples. A downward trend of the ratio evaluated on the post-sputtering sample indicates the possibility of a Zn-enriched phase appearing on the annealed O-face surface. This phenomenon can further elucidate the O-deficiency debate on most ZnO materials. (C) 2012 Elsevier B. V. All rights reserved.
引用
收藏
页码:174 / 181
页数:8
相关论文
共 33 条
  • [1] Six-fold in-plane magnetic anisotropy in Co-implanted ZnO (0001)
    Akdogan, Numan
    Rameev, Bulat
    Guler, Suemeyra
    Ozturk, Osman
    Aktas, Bekir
    Zabel, Hartmut
    Khaibullin, Rustam
    Tagirov, Lenar
    [J]. APPLIED PHYSICS LETTERS, 2009, 95 (10)
  • [2] Davis L.E., 1976, HDB AUGER ELECT SPEC
  • [3] Nanoarchitectures of semiconducting and piezoelectric zinc oxide
    Gao, PX
    Wang, ZL
    [J]. JOURNAL OF APPLIED PHYSICS, 2005, 97 (04)
  • [4] Gries WH, 1996, SURF INTERFACE ANAL, V24, P38, DOI 10.1002/(SICI)1096-9918(199601)24:1<38::AID-SIA84>3.0.CO
  • [5] 2-H
  • [6] Effect of thermal treatment on ZnO substrate for epitaxial growth
    Gu, X
    Sabuktagin, S
    Teke, A
    Johnstone, D
    Morkoç, H
    Nemeth, B
    Nause, J
    [J]. JOURNAL OF MATERIALS SCIENCE-MATERIALS IN ELECTRONICS, 2004, 15 (06) : 373 - 378
  • [7] Optical properties of GaN grown on ZnO by reactive molecular beam epitaxy
    Hamdani, F
    Botchkarev, A
    Kim, W
    Morkoc, H
    Yeadon, M
    Gibson, JM
    Tsen, SCY
    Smith, DJ
    Evans, K
    Litton, CW
    Mitchel, WC
    Hemenger, P
    [J]. APPLIED PHYSICS LETTERS, 1997, 70 (04) : 467 - 469
  • [8] Role of grain boundary and grain defects on ferromagnetism in Co:ZnO films
    Hsu, H. S.
    Huang, J. C. A.
    Chen, S. F.
    Liu, C. P.
    [J]. APPLIED PHYSICS LETTERS, 2007, 90 (10)
  • [9] High-quality ZnO epilayers grown on Zn-face ZnO substrates by plasma-assisted molecular beam epitaxy
    Kato, H
    Sano, M
    Miyamoto, K
    Yao, T
    [J]. JOURNAL OF CRYSTAL GROWTH, 2004, 265 (3-4) : 375 - 381
  • [10] Quantitative Auger electron spectroscopy of SiC
    Kosiba, R.
    Liday, J.
    Ecke, G.
    Ambacher, O.
    Breza, J.
    Vogrincic, P.
    [J]. VACUUM, 2006, 80 (09) : 990 - 995