Correlation between oxygen-deficient center concentration and KrF excimer laser induced defects in thermally annealed Ge-doped optical fiber preforms

被引:47
作者
Essid, M
Albert, J
Brebner, JL
Awazu, K
机构
[1] Univ Montreal, Dept Phys, Grp Rech Phys & Technol Couches Minces, Montreal, PQ H3C 3J7, Canada
[2] Commun Res Ctr, Ottawa, ON K2H 8S2, Canada
[3] Electrotech Lab, Tsukuba, Ibaraki 3058568, Japan
基金
加拿大自然科学与工程研究理事会;
关键词
D O I
10.1016/S0022-3093(99)00084-8
中图分类号
TQ174 [陶瓷工业]; TB3 [工程材料学];
学科分类号
0805 ; 080502 ;
摘要
The amplitude of the 5 eV optical absorption band of oxygen-deficient germanium-doped silica samples (3GeO(2):97SiO(2)) was varied by annealing in oxygen at 1000 degrees C for different periods of time. Each sample was irradiated with the same dose of 5 eV light from a KrF excimer laser to study the effect of the absorption band amplitude on the photo-induced changes. ESR (Electron spin resonance) and optical absorption measurements were carried out after each annealing and each laser irradiation cycle. We find that samples with an initially higher 5 eV absorption band amplitude exhibit a larger increase in the absorption bands related to the photo-induced paramagnetic Ge E' and GEC (Germanium Electron Center) when irradiated with the same laser dose. Deconvolution of the measured spectra shows that the concentrations of the photo-induced paramagnetic Ge E' and GEC defects are well correlated with the concentration of GLPC (germanium lone pair center) defects associated with a 5.14 eV absorption band. (C) 1999 Published by Elsevier Science B.V. All rights reserved.
引用
收藏
页码:39 / 45
页数:7
相关论文
共 21 条
[11]   FORMATION AND PHOTOBLEACHING OF 5 EV BANDS IN ION-IMPLANTED SIO2-GE AND SIO2 GLASSES FOR PHOTOSENSITIVE MATERIALS [J].
HOSONO, H ;
KAWAMURA, K ;
UEDA, N ;
KAWAZOE, H ;
FUJITSU, S ;
MATSUNAMI, N .
JOURNAL OF PHYSICS-CONDENSED MATTER, 1995, 7 (26) :L343-L350
[12]   NATURE AND ORIGIN OF THE 5-EV BAND IN SIO2-GEO2 GLASSES [J].
HOSONO, H ;
ABE, Y ;
KINSER, DL ;
WEEKS, RA ;
MUTA, K ;
KAWAZOE, H .
PHYSICAL REVIEW B, 1992, 46 (18) :11445-11451
[13]   Absorption spectral changes with ultraviolet-illumination in GeO2-SiO2 glass films prepared by sputtering deposition [J].
Nishii, J ;
Yamanaka, H ;
Hosono, H ;
Kawazoe, H .
RADIATION EFFECTS AND DEFECTS IN SOLIDS, 1995, 136 (1-4) :133-136
[14]   CHARACTERISTICS OF 5-EV ABSORPTION-BAND IN SPUTTER-DEPOSITED GEO2-SIO2 THIN GLASS-FILMS [J].
NISHII, J ;
YAMANAKA, H ;
HOSONO, H ;
KAWAZOE, H .
APPLIED PHYSICS LETTERS, 1994, 64 (03) :282-284
[15]   PHOTOCHEMICAL-REACTIONS IN GEO2-SIO2 GLASSES INDUCED BY ULTRAVIOLET-IRRADIATION - COMPARISON BETWEEN HG LAMP AND EXCIMER-LASER [J].
NISHII, J ;
FUKUMI, K ;
YAMANAKA, H ;
KAWAMURA, KI ;
HOSONO, H ;
KAWAZOE, H .
PHYSICAL REVIEW B, 1995, 52 (03) :1661-1665
[16]  
RUSSELL PS, 1990, SPIE, V1373, P126
[17]   CORRELATION OF DEFECT CENTERS WITH A WAVELENGTH-DEPENDENT PHOTOSENSITIVE RESPONSE IN GERMANIA-DOPED SILICA OPTICAL FIBERS [J].
SIMMONS, KD ;
LAROCHELLE, S ;
MIZRAHI, V ;
STEGEMAN, GI ;
GRISCOM, DL .
OPTICS LETTERS, 1991, 16 (03) :141-143
[18]   STRUCTURAL ORIGIN OF THE 5.16-EV OPTICAL-ABSORPTION BAND IN SILICA AND GE-DOPED SILICA [J].
TSAI, TE ;
FRIEBELE, EJ ;
RAJARAM, M ;
MUKHAPADHYAY, S .
APPLIED PHYSICS LETTERS, 1994, 64 (12) :1481-1483
[19]   CORRELATION OF DEFECT CENTERS WITH 2ND-HARMONIC GENERATION IN GE-DOPED AND GE-P-DOPED SILICA-CORE SINGLE-MODE FIBERS [J].
TSAI, TE ;
SAIFI, MA ;
FRIEBELE, EJ ;
GRISCOM, DL ;
OSTERBERG, U .
OPTICS LETTERS, 1989, 14 (18) :1023-1025
[20]  
TSAI TE, 1987, DIFFUSION DEFECT DAT, V53, P469