Correlation between oxygen-deficient center concentration and KrF excimer laser induced defects in thermally annealed Ge-doped optical fiber preforms

被引:47
作者
Essid, M
Albert, J
Brebner, JL
Awazu, K
机构
[1] Univ Montreal, Dept Phys, Grp Rech Phys & Technol Couches Minces, Montreal, PQ H3C 3J7, Canada
[2] Commun Res Ctr, Ottawa, ON K2H 8S2, Canada
[3] Electrotech Lab, Tsukuba, Ibaraki 3058568, Japan
基金
加拿大自然科学与工程研究理事会;
关键词
D O I
10.1016/S0022-3093(99)00084-8
中图分类号
TQ174 [陶瓷工业]; TB3 [工程材料学];
学科分类号
0805 ; 080502 ;
摘要
The amplitude of the 5 eV optical absorption band of oxygen-deficient germanium-doped silica samples (3GeO(2):97SiO(2)) was varied by annealing in oxygen at 1000 degrees C for different periods of time. Each sample was irradiated with the same dose of 5 eV light from a KrF excimer laser to study the effect of the absorption band amplitude on the photo-induced changes. ESR (Electron spin resonance) and optical absorption measurements were carried out after each annealing and each laser irradiation cycle. We find that samples with an initially higher 5 eV absorption band amplitude exhibit a larger increase in the absorption bands related to the photo-induced paramagnetic Ge E' and GEC (Germanium Electron Center) when irradiated with the same laser dose. Deconvolution of the measured spectra shows that the concentrations of the photo-induced paramagnetic Ge E' and GEC defects are well correlated with the concentration of GLPC (germanium lone pair center) defects associated with a 5.14 eV absorption band. (C) 1999 Published by Elsevier Science B.V. All rights reserved.
引用
收藏
页码:39 / 45
页数:7
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