Photoluminescence investigation about zinc oxide with graphene oxide & reduced graphene oxide buffer layers
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作者:
Ding, Jijun
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Xi An Jiao Tong Univ, Int Ctr Dielect Res, Sch Elect & Informat Engn, Elect Mat Res Lab,Key Lab,Minist Educ, Xian 710049, Peoples R ChinaXi An Jiao Tong Univ, Int Ctr Dielect Res, Sch Elect & Informat Engn, Elect Mat Res Lab,Key Lab,Minist Educ, Xian 710049, Peoples R China
Ding, Jijun
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Wang, Minqiang
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Xi An Jiao Tong Univ, Int Ctr Dielect Res, Sch Elect & Informat Engn, Elect Mat Res Lab,Key Lab,Minist Educ, Xian 710049, Peoples R ChinaXi An Jiao Tong Univ, Int Ctr Dielect Res, Sch Elect & Informat Engn, Elect Mat Res Lab,Key Lab,Minist Educ, Xian 710049, Peoples R China
Wang, Minqiang
[1
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Zhang, Xiangyu
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Xi An Jiao Tong Univ, Int Ctr Dielect Res, Sch Elect & Informat Engn, Elect Mat Res Lab,Key Lab,Minist Educ, Xian 710049, Peoples R ChinaXi An Jiao Tong Univ, Int Ctr Dielect Res, Sch Elect & Informat Engn, Elect Mat Res Lab,Key Lab,Minist Educ, Xian 710049, Peoples R China
Zhang, Xiangyu
[1
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Yang, Zhi
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Xi An Jiao Tong Univ, Int Ctr Dielect Res, Sch Elect & Informat Engn, Elect Mat Res Lab,Key Lab,Minist Educ, Xian 710049, Peoples R ChinaXi An Jiao Tong Univ, Int Ctr Dielect Res, Sch Elect & Informat Engn, Elect Mat Res Lab,Key Lab,Minist Educ, Xian 710049, Peoples R China
Yang, Zhi
[1
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Song, Xiaohui
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Xi An Jiao Tong Univ, Int Ctr Dielect Res, Sch Elect & Informat Engn, Elect Mat Res Lab,Key Lab,Minist Educ, Xian 710049, Peoples R ChinaXi An Jiao Tong Univ, Int Ctr Dielect Res, Sch Elect & Informat Engn, Elect Mat Res Lab,Key Lab,Minist Educ, Xian 710049, Peoples R China
Song, Xiaohui
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Ran, Chenxin
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Xi An Jiao Tong Univ, Int Ctr Dielect Res, Sch Elect & Informat Engn, Elect Mat Res Lab,Key Lab,Minist Educ, Xian 710049, Peoples R ChinaXi An Jiao Tong Univ, Int Ctr Dielect Res, Sch Elect & Informat Engn, Elect Mat Res Lab,Key Lab,Minist Educ, Xian 710049, Peoples R China
Ran, Chenxin
[1
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机构:
[1] Xi An Jiao Tong Univ, Int Ctr Dielect Res, Sch Elect & Informat Engn, Elect Mat Res Lab,Key Lab,Minist Educ, Xian 710049, Peoples R China
ZnO with graphene oxide (GO-ZnO) & reduced graphene oxide (rGO-ZnO) buffer layers were fabricated. Photoluminescence (PL) properties of GO-ZnO and rGO-ZnO compositions induced by oxygen vacancies defects were investigated using photoluminescence spectroscopy. The results showed that blue emission is quenched while yellow-orange emissions from GO-ZnO and rGO-ZnO compositions are significantly increased as compared to that of ZnO films. In stark contrast to enhanced yellow-orange emissions, PL spectra show three sharp, discrete emissions that characterize the dominant optical active defect, which is the oxygen vacancies and extended oxygen vacancies. Our results highlight the ability of GO & rGO buffer layers to modulate defect concentrations in ZnO and contribute to understanding the optical properties of deep-level defects, which is significant for development of long-wavelength photoelectric devices related with graphene materials. Crown Copyright (C) 2013 Published by Elsevier Inc. All rights reserved.
机构:
Kangwon Natl Univ, Dept Biol Environm, Chunchon 24341, South KoreaKangwon Natl Univ, Dept Biol Environm, Chunchon 24341, South Korea
Yoon, Soyeong
Kim, Jeong-A
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Kangwon Natl Univ, Dept Battery Convergence Engn, Chunchon 24341, South KoreaKangwon Natl Univ, Dept Biol Environm, Chunchon 24341, South Korea
Kim, Jeong-A
Choi, Jin-Hyuk
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Kangwon Natl Univ, Dept Biol Environm, Chunchon 24341, South KoreaKangwon Natl Univ, Dept Biol Environm, Chunchon 24341, South Korea
Choi, Jin-Hyuk
Jang, Taesoon
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Kangwon Natl Univ, Dept Biol Environm, Chunchon 24341, South KoreaKangwon Natl Univ, Dept Biol Environm, Chunchon 24341, South Korea
Jang, Taesoon
Kim, Narae
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Kangwon Natl Univ, Dept Interdisciplinary Program Integrated Energy &, Chunchon 24341, South KoreaKangwon Natl Univ, Dept Biol Environm, Chunchon 24341, South Korea