Temperature and face dependent copper-graphene interactions

被引:26
作者
Costa, Sara D. [1 ]
Weis, Johan Ek [1 ]
Frank, Otakar [1 ]
Kalbac, Martin [1 ]
机构
[1] Acad Sci Czech Republ, J Heyrovsky Inst Phys Chem, Vvi, CZ-18223 Prague 8, Czech Republic
关键词
CHEMICAL-VAPOR-DEPOSITION; RAMAN-SPECTROSCOPY; WORK FUNCTION; STRAIN; FILMS; CONDUCTIVITY; SUBSTRATE; CRYSTAL; GROWTH;
D O I
10.1016/j.carbon.2015.06.002
中图分类号
O64 [物理化学(理论化学)、化学物理学];
学科分类号
070304 ; 081704 ;
摘要
The interaction between graphene and metals represents an important issue for the large-area preparation of graphene, graphene transfer and the contact quality in graphene devices. We demonstrate a simple method for estimating and manipulating the level of interaction between graphene and copper single crystals through heat treatment, at temperatures from 298 K to 1073 K. We performed in-situ Raman spectroscopy showing Cu face-specific behavior of the overlying graphene during the heat treatment. On Cu(111) the interaction is consistent with theoretical predictions and remains stable, whereas on Cu(100) and Cu(110), the initially very weak interaction and charge transfer can be tuned by heating. Our results also suggest that graphene grown on Cu(100) and Cu(110) is detached from the copper substrate, thereby possibly enabling an easier graphene transfer process as compared to Cu(111). (C) 2015 Elsevier Ltd. All rights reserved.
引用
收藏
页码:793 / 799
页数:7
相关论文
共 45 条
[1]  
Bae S, 2010, NAT NANOTECHNOL, V5, P574, DOI [10.1038/nnano.2010.132, 10.1038/NNANO.2010.132]
[2]   Probing the Intrinsic Properties of Exfoliated Graphene: Raman Spectroscopy of Free-Standing Monolayers [J].
Berciaud, Stephane ;
Ryu, Sunmin ;
Brus, Louis E. ;
Heinz, Tony F. .
NANO LETTERS, 2009, 9 (01) :346-352
[3]   Phonon anharmonicities in graphite and graphene [J].
Bonini, Nicola ;
Lazzeri, Michele ;
Marzari, Nicola ;
Mauri, Francesco .
PHYSICAL REVIEW LETTERS, 2007, 99 (17)
[4]   Raman spectroscopy of substrate-induced compression and substrate doping in thermally cycled graphene [J].
Chen, Chun-Chung ;
Bao, Wenzhong ;
Chang, Chia-Chi ;
Zhao, Zeng ;
Lau, Chun Ning ;
Cronin, Stephen B. .
PHYSICAL REVIEW B, 2012, 85 (03)
[5]   Monitoring dopants by Raman scattering in an electrochemically top-gated graphene transistor [J].
Das, A. ;
Pisana, S. ;
Chakraborty, B. ;
Piscanec, S. ;
Saha, S. K. ;
Waghmare, U. V. ;
Novoselov, K. S. ;
Krishnamurthy, H. R. ;
Geim, A. K. ;
Ferrari, A. C. ;
Sood, A. K. .
NATURE NANOTECHNOLOGY, 2008, 3 (04) :210-215
[6]   Frame assisted H2O electrolysis induced H2 bubbling transfer of large area graphene grown by chemical vapor deposition on Cu [J].
de la Rosa, Cesar J. Lockhart ;
Sun, Jie ;
Lindvall, Niclas ;
Cole, Matthew T. ;
Nam, Youngwoo ;
Loffler, Markus ;
Olsson, Eva ;
Teo, Kenneth B. K. ;
Yurgens, August .
APPLIED PHYSICS LETTERS, 2013, 102 (02)
[7]  
Delhaes P., 2000, GRAPHITE PRECURSORS, V1
[8]   Heating Isotopically Labeled Bernal Stacked Graphene: A Raman Spectroscopy Study [J].
Ek-Weis, Johan ;
Costa, Sara ;
Frank, Otakar ;
Kalbac, Martin .
JOURNAL OF PHYSICAL CHEMISTRY LETTERS, 2014, 5 (03) :549-554
[9]   Raman Spectroscopy and in Situ Raman Spectroelectrochemistry of Isotopically Engineered Graphene Systems [J].
Frank, Otakar ;
Dresselhaus, Mildred S. ;
Kalbac, Martin .
ACCOUNTS OF CHEMICAL RESEARCH, 2015, 48 (01) :111-118
[10]   Interaction between graphene and copper substrate: The role of lattice orientation [J].
Frank, Otakar ;
Vejpravova, Jana ;
Holy, Vaclau ;
Kavan, Ladislau ;
Kalbac, Martin .
CARBON, 2014, 68 :440-451