Effect of niobium doping on the structural, electrical and optical properties of epitaxial SnO2 films on MgF2 (110) substrates by MOCVD

被引：7

作者：

He, Linan ^{[1
]}

Luan, Caina ^{[1
]}

Feng, Xianjin ^{[1
]}

Xiao, Hongdi ^{[1
]}

Ma, Jin ^{[1
]}

机构：

[1] Shandong Univ, Sch Microelect, Jinan 250100, Shandong, Peoples R China

来源：

JOURNAL OF ALLOYS AND COMPOUNDS | 2018年 / 741卷

基金：

中国国家自然科学基金;

关键词：

Thin film; X-ray diffraction; TEM; Electrical properties; SB-DOPED SNO2; THIN-FILMS; TRANSPORT;

D O I：

10.1016/j.jallcom.2018.01.219

中图分类号：

O64 [物理化学（理论化学）、化学物理学];

学科分类号：

070304 ; 081704 ;

摘要：

Niobium (Nb)-doped SnO2 films were epitaxially grown on MgF2 (110) substrates by the metal organic chemical vapor deposition (MOCVD) technique. Structural, electrical and optical properties of the obtained films with different Nb-doping levels were investigated. The X-ray diffraction analysis revealed that the obtained films were rutile structure SnO2 grown along the (110) orientation. The epitaxial relationship between the Nb-doped SnO2 film and MgF2 substrate was clarified as SnO2 (110) parallel to MgF2 (110) with SnO2 [001] parallel to MgF2 [001] by the interface selected area electron diffraction measurement. A Hall mobility as high as 84 cm(2) V-1 s(-1) with the lowest resistivity of 2.9 x 10(-3) Omega cm were obtained for the 4.3 at.% Nb-doped SnO2 film. The average optical transmittance in visible range of the 4.3 at.% Nb-doped SnO2 film exceeded 80% and the optical band gap was about 4.04 eV. (c) 2018 Elsevier B.V. All rights reserved.

引用

页码：677 / 681

页数：5

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