Contribution of radial dopant concentration to the thermoelectric properties of core-shell nanowires

被引：7

作者：

Martinez, Julio A. ^{[1
,2
]}

Cho, Jeong-Hyun ^{[3
]}

Liu, Xiaohua ^{[2
]}

Luk, Ting S. ^{[2
]}

Huang, Jianyu ^{[2
]}

Picraux, S. T. ^{[3
]}

Sullivan, John P. ^{[2
]}

Swartzentruber, B. S. ^{[2
]}

机构：

[1] New Mexico State Univ, Dept Chem Engn, Las Cruces, NM 88003 USA

[2] Sandia Natl Labs, Ctr Integrated Nanotechnol, Albuquerque, NM 87185 USA

[3] Los Alamos Natl Lab, Ctr Integrated Nanotechnol, Los Alamos, NM 87545 USA

来源：

APPLIED PHYSICS LETTERS | 2013年 / 102卷 / 10期

关键词：

THERMAL-CONDUCTIVITY; ELECTRICAL-PROPERTIES; GERMANIUM NANOWIRES; SILICON; GE;

D O I：

10.1063/1.4794821

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We report the thermoelectric characteristics of core-shell p-type germanium nanowires (GeNWs) (lightly doped core, heavily doped shell). Overall, the thermoelectric characteristics are dominated by the heavily doped shell. Experimental data indicate that surface states produce dopant deactivation when the heavily doped shell is removed. Under this situation, the thermoelectric figure of merit is degraded. Etching the heavily doped shell resulted in a rough germanium nanowire with a thermal conductivity close to 1.1 W/m-K at 300 K, which is one of the smallest k measured for nanowires and comparable to the thermal conductivity of bulk SiO2. (C) 2013 American Institute of Physics. [http://dx.doi.org/10.1063/1.4794821]

引用

页数：5

共 25 条

[1] Efficient visible light detection using individual germanium nanowire field effect transistors [J].

Ahn, Y. H. ;

Park, Jiwoong .

APPLIED PHYSICS LETTERS, 2007, 91 (16)

[2] Nonuniform Nanowire Doping Profiles Revealed by Quantitative Scanning Photocurrent Microscopy [J].

Allen, Jonathan E. ;

Perea, Daniel E. ;

Hemesath, Eric R. ;

Lauhon, Lincoln J. .

ADVANCED MATERIALS, 2009, 21 (30) :3067-+

[3] INFLUENCE OF DEFECTS AND OF INTERACTION BETWEEN THEM ON PHONON SCATTERING IN HEAVILY DOPED GE AND SI CRYSTALS [J].

ARASLI, DG ;

ALIEV, MI .

PHYSICA STATUS SOLIDI, 1967, 21 (02) :643-&

[4] Predictions of thermal boundary conductance for systems of disordered solids and interfaces [J].

Beechem, Thomas ;

Hopkins, Patrick E. .

JOURNAL OF APPLIED PHYSICS, 2009, 106 (12)

[5]

Björk MT, 2009, NAT NANOTECHNOL, V4, P103, DOI [10.1038/NNANO.2008.400, 10.1038/nnano.2008.400]

[6] Silicon nanowires as efficient thermoelectric materials [J].

Boukai, Akram I. ;

Bunimovich, Yuri ;

Tahir-Kheli, Jamil ;

Yu, Jen-Kan ;

Goddard, William A., III ;

Heath, James R. .

NATURE, 2008, 451 (7175) :168-171

[7] THE THERMAL CONDUCTIVITY OF GERMANIUM AND SILICON BETWEEN 2-DEGREES-K AND 300-DEGREES-K [J].

CARRUTHERS, JA ;

GEBALLE, TH ;

ROSENBERG, HM ;

ZIMAN, JM .

PROCEEDINGS OF THE ROYAL SOCIETY OF LONDON SERIES A-MATHEMATICAL AND PHYSICAL SCIENCES, 1957, 238 (1215) :502-514

[8] TEMPERATURE DEPENDENCE OF CONDUCTIVITY EFFECTIVE MASS OF HOLES IN GERMANIUM [J].

CHAMPLIN, KS ;

ARMSTRONG, DB ;

HOLM, JD ;

PATRIN, NA .

PHYSICAL REVIEW LETTERS, 1965, 14 (14) :547-+

[9] Thermoelectric figure of merit calculations for semiconducting nanowires [J].

Cornett, Jane E. ;

Rabin, Oded .

APPLIED PHYSICS LETTERS, 2011, 98 (18)

[10] ELECTRICAL PROPERTIES OF N-TYPE GERMANIUM [J].

DEBYE, PP ;

CONWELL, EM .

PHYSICAL REVIEW, 1954, 93 (04) :693-706

← 1 2 3 →