Direct patterning of solution-processed organic thin-film transistor by selective control of solution wettability of polymer gate dielectric

被引：13

作者：

Fujisaki, Yoshihide ^{[1
]}

Ito, Hiroshi ^{[2
]}

Nakajima, Yoshiki ^{[1
]}

Nakata, Mitsuru ^{[1
]}

Tsuji, Hiroshi ^{[1
]}

Yamamoto, Toshihiro ^{[1
]}

Furue, Hirokazu ^{[2
]}

Kurita, Taiichiro ^{[1
]}

Shimidzu, Naoki ^{[1
]}

机构：

[1] NHK Sci & Technol Res Labs, Setagaya Ku, Tokyo 1578510, Japan

[2] Tokyo Univ Sci, Dept Mat Sci & Technol, Noda, Chiba 2788510, Japan

来源：

APPLIED PHYSICS LETTERS | 2013年 / 102卷 / 15期

关键词：

FIELD-EFFECT TRANSISTORS; HIGH-MOBILITY; PERFORMANCE;

D O I：

10.1063/1.4802499

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

A simple direct patterning method for solution-processable organic semiconductors (OSCs) is demonstrated. The solution-wettable and nonwettable regions of a polymer gate dielectric layer were selectively controlled by a short tetrafluoromethane gas plasma treatment, and we precisely patterned the OSC film in the desired channel region by lamination coating. The patterned OSC films represent polycrystalline structures consisting of crystalline domains varying from 30 to 60 mu m, and the resulting short-channel thin-film transistor (TFT) showed a high mobility of up to 1.3 cm(2)/Vs, a large on/off ratio over 10(8), and a negligible hysteresis curve. The proposed method is scalable for patterning TFT arrays with large-area dimensions. (C) 2013 AIP Publishing LLC [http://dx.doi.org/10.1063/1.4802499]

引用

页数：5

共 50 条

[1] Organic thin-film transistor from solution-processed precursor film
Hattori, Reiji
2007 PACIFIC RIM CONFERENCE ON LASERS AND ELECTRO-OPTICS, VOLS 1-4, 2007, : 840 - 841
[2] Totally solution-processed ferroelectric-gate thin-film transistor
Miyasako, Takaaki
Trinh, Bui Nguyen Quoc
Onoue, Masatoshi
Kaneda, Toshihiko
Tue, Phan Trong
Tokumitsu, Eisuke
Shimoda, Tatsuya
APPLIED PHYSICS LETTERS, 2010, 97 (17)
[3] Solution-processed high performance HIZO thin film transistor with AZO gate dielectric
Gao Ya-Na
Li Xi-Feng
Zhang Jian-Hua
ACTA PHYSICA SINICA, 2014, 63 (11)
[4] Solution-Processed Organic Thin-Film Transistor Arrays with the Assistance of Laser Ablation
Yang, Huihuang
Chen, Cihai
Zhang, Guocheng
Lan, Shuqiong
Chen, Huipeng
Guo, Tailiang
ACS APPLIED MATERIALS & INTERFACES, 2017, 9 (04) : 3849 - 3856
[5] Bias Stability Enhancement in Thin-Film Transistor with a Solution-Processed ZrO2 Dielectric as Gate Insulator
Zhou, Shangxiong
Fang, Zhiqiang
Ning, Honglong
Cai, Wei
Zhu, Zhennan
Wei, Jinglin
Lu, Xubing
Yuan, Weijian
Yao, Rihui
Peng, Junbiao
APPLIED SCIENCES-BASEL, 2018, 8 (05):
[6] Bioinspired Solution-processed Artificial Synaptic Thin-Film Transistor
Li, J. Y.
Sun, G. X.
Zhao, C.
Man, K. L.
Lam, S.
Tu, X.
2023 20TH INTERNATIONAL SOC DESIGN CONFERENCE, ISOCC, 2023, : 193 - 194
[7] Solution-processed hybrid organic-inorganic complementary thin-film transistor inverter
Cheong, Heajeong
Kuribara, Kazunori
Ogura, Shintaro
Fukuda, Nobuko
Yoshida, Manabu
Ushijima, Hirobumi
Uemura, Sei
JAPANESE JOURNAL OF APPLIED PHYSICS, 2016, 55 (04)
[8] Solution-processed flexible ZnO transparent thin-film transistors with a polymer gate dielectric fabricated by microwave heating
Yang, Chanwoo
Hong, Kipyo
Jang, Jaeyoung
Chung, Dae Sung
An, Tae Kyu
Choi, Woon-Seop
Park, Chan Eon
NANOTECHNOLOGY, 2009, 20 (46)
[9] A mixed solution-processed gate dielectric for zinc-tin oxide thin-film transistor and its MIS capacitance
Kim, Hunho
Kwack, Young-Jin
Yun, Eui-Jung
Choi, Woon-Seop
SCIENTIFIC REPORTS, 2016, 6
[10] A mixed solution-processed gate dielectric for zinc-tin oxide thin-film transistor and its MIS capacitance
Hunho Kim
Young-Jin Kwack
Eui-Jung Yun
Woon-Seop Choi
Scientific Reports, 6

← 1 2 3 4 5 →