Excitons in insulating cuprates

被引：42

作者：

Simon, ME ^{[1
]}

Aligia, AA ^{[1
]}

Batista, CD ^{[1
]}

Gagliano, ER ^{[1
]}

Lema, F ^{[1
]}

机构：

[1] COMIS NACL ENERGIA ATOM, INST BALSEIRO, RA-8400 SAN CARLOS BARILO, ARGENTINA

来源：

PHYSICAL REVIEW B | 1996年 / 54卷 / 06期

关键词：

D O I：

10.1103/PhysRevB.54.R3780

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

We study the electronic excitations near the charge-transfer gap in insulating CuO2 planes, starting from a six-band model which includes p(pi) and d(xy) orbitals and Cu-O nearest-neighbor repulsion U-pd. While the low-lying electronic excitations in the doped system are well described by a modified t-J model, the excitonic states of the insulator include hybrid d(xy)-p(pi) states of A(2g) symmetry. We also obtain excitons of symmetries B-1g and E(u), and eventually A(1g), which can be explained within a one-band model. The results agree with observed optical absorption and Raman excitations.

引用

页码：R3780 / R3783

页数：4

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