Lateral Epitaxy of Atomically Sharp WSe2/WS2 Heterojunctions on Silicon Dioxide Substrates

被引：62
|
作者：
Chen, Jianyi [1 ,2 ]
Zhou, Wu [3 ,4 ]
Tang, Wei [1 ,2 ]
Tian, Bingbing [1 ,2 ]
Zhao, Xiaoxu [1 ,2 ]
Xu, Hai [1 ,2 ]
Liu, Yanpeng [1 ,2 ]
Geng, Dechao [1 ,2 ]
Tan, Sherman Jun Rong [1 ,2 ]
Fu, Wei [1 ,2 ]
Loh, Kian Ping [1 ,2 ]
机构：
[1] Natl Univ Singapore, Dept Chem, 3 Sci Dr 3, Singapore 117546, Singapore
[2] Natl Univ Singapore, Ctr Adv Mat 2D, 3 Sci Dr 3, Singapore 117546, Singapore
[3] Oak Ridge Natl Lab, Mat Sci & Technol Div, Oak Ridge, TN 37831 USA
[4] Univ Chinese Acad Sci, Sch Phys Sci, CAS Key Lab Vacuum Phys, 19A Yuquan Rd, Beijing 100049, Peoples R China
来源：
CHEMISTRY OF MATERIALS | 2016年 / 28卷 / 20期
基金：
新加坡国家研究基金会;
关键词：
TRANSITION-METAL DICHALCOGENIDES; CHEMICAL-VAPOR-DEPOSITION; OPTICAL-PROPERTIES; MONOLAYER; GROWTH; NANOSHEETS; HETEROSTRUCTURES; DEFECTS; LAYERS;
D O I：
10.1021/acs.chemmater.6b03639
中图分类号：
O64 [物理化学（理论化学）、化学物理学];
学科分类号：
070304 ; 081704 ;
摘要：
[No abstract available]
引用
收藏
页码：7194 / 7197
页数：4
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