Lateral Epitaxy of Atomically Sharp WSe2/WS2 Heterojunctions on Silicon Dioxide Substrates

被引：63

作者：

Chen, Jianyi ^{[1
,2
]}

Zhou, Wu ^{[3
,4
]}

Tang, Wei ^{[1
,2
]}

Tian, Bingbing ^{[1
,2
]}

Zhao, Xiaoxu ^{[1
,2
]}

Xu, Hai ^{[1
,2
]}

Liu, Yanpeng ^{[1
,2
]}

Geng, Dechao ^{[1
,2
]}

Tan, Sherman Jun Rong ^{[1
,2
]}

Fu, Wei ^{[1
,2
]}

Loh, Kian Ping ^{[1
,2
]}

机构：

[1] Natl Univ Singapore, Dept Chem, 3 Sci Dr 3, Singapore 117546, Singapore

[2] Natl Univ Singapore, Ctr Adv Mat 2D, 3 Sci Dr 3, Singapore 117546, Singapore

[3] Oak Ridge Natl Lab, Mat Sci & Technol Div, Oak Ridge, TN 37831 USA

[4] Univ Chinese Acad Sci, Sch Phys Sci, CAS Key Lab Vacuum Phys, 19A Yuquan Rd, Beijing 100049, Peoples R China

来源：

CHEMISTRY OF MATERIALS | 2016年 / 28卷 / 20期

基金：

新加坡国家研究基金会;

关键词：

TRANSITION-METAL DICHALCOGENIDES; CHEMICAL-VAPOR-DEPOSITION; OPTICAL-PROPERTIES; MONOLAYER; GROWTH; NANOSHEETS; HETEROSTRUCTURES; DEFECTS; LAYERS;

D O I：

10.1021/acs.chemmater.6b03639

中图分类号：

O64 [物理化学（理论化学）、化学物理学];

学科分类号：

070304 ; 081704 ;

摘要：

[No abstract available]

引用

页码：7194 / 7197

页数：4

共 19 条

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