IR study of fundamental chemical reactions in atomic layer deposition of HfO2 with tetrakis(ethylmethylamino)hafnium (TEMAH), ozone, and water vapor

被引：19

作者：

Hirose, F. ^{[1
]}

Kinoshita, Y. ^{[1
]}

Kanomata, K. ^{[1
]}

Momiyama, K. ^{[1
]}

Kubota, S. ^{[1
]}

Hirahara, K. ^{[1
]}

Kimura, Y. ^{[2
]}

Niwano, M. ^{[2
]}

机构：

[1] Yamagata Univ, Grad Sch Sci & Engn, Yonezawa, Yamagata 9928510, Japan

[2] Tohoku Univ, RIEC, Sendai, Miyagi 9808577, Japan

来源：

APPLIED SURFACE SCIENCE | 2012年 / 258卷 / 19期

关键词：

HfO2; Atomic layer deposition; IR absorption spectroscopy; HAFNIUM OXIDE; ADSORPTION; SI(100); TRIS(DIMETHYLAMINO)SILANE; OXIDATION; SILICON; TIO2; ALD; SPECTROSCOPY; PRECURSORS;

D O I：

10.1016/j.apsusc.2012.04.130

中图分类号：

O64 [物理化学（理论化学）、化学物理学];

学科分类号：

070304 ; 081704 ;

摘要：

The fundamental reactions in HfO2 atomic layer deposition (ALD) with the precursors tetrakis(ethylmethylamino) hafnium (TEMAH), ozone, and water vapor on Si (1 0 0) surfaces at room temperature (RT) were studied by infrared absorption spectroscopy (IRAS) with a multiple internal reflection geometry. The IRAS results indicated that TEMAH can be adsorbed at OH sites on Si surfaces at RT. Ozone irradiation on the TEMAH-adsorbed Si surface at RT effectively removes hydroaminocarbon adsorbates introduced in the course of TEMAH adsorption, although this treatment provides no OH-group adsorption sites for TEMAH on the Si surface at RT. For further adsorption, water-vapor treatment at around 160 degrees C is effective in restoring the adsorption sites. The IR study suggests that the cyclic process of TEMAH adsorption and ozone treatment at RT followed by OH restoration with water vapor at a temperature of 160 degrees C allows continuous HfO2 deposition. (C) 2012 Elsevier B.V. All rights reserved.

引用

页码：7726 / 7731

页数：6

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