Realization of Vertically Aligned, Ultrahigh Aspect Ratio InAsSb Nanowires on Graphite

被引：37

作者：

Anyebe, E. A. ^{[1
]}

Sanchez, A. M. ^{[2
]}

Hindmarsh, S. ^{[2
]}

Chen, X. ^{[3
]}

Shao, J. ^{[3
]}

Rajpalke, M. K. ^{[4
,5
]}

Veal, T. D. ^{[4
,5
]}

Robinson, B. J. ^{[1
]}

Kolosoy, O. ^{[1
]}

Anderson, F. ^{[6
]}

Sundaram, R. ^{[6
]}

Wang, Z. M. ^{[7
]}

Falko, V. ^{[1
]}

Zhuang, Q. ^{[1
]}

机构：

[1] Univ Lancaster, Dept Phys, Lancaster LA1 4YB, England

[2] Univ Warwick, Dept Phys, Coventry CV4 7AL, W Midlands, England

[3] Chinese Acad Sci, Natl Lab Infrared Phys, Shanghai Inst Tech Phys, Shanghai 200083, Peoples R China

[4] Univ Liverpool, Stephenson Inst Renewable Energy, Liverpool L69 7ZF, Merseyside, England

[5] Univ Liverpool, Dept Phys, Liverpool L69 7ZF, Merseyside, England

[6] Tubney Woods, Oxford Instruments, Abingdon OX13 5QX, Oxon, England

[7] Univ Elect Sci & Technol China, Inst Fundamental & Frontier Sci, Chengdu 610054, Peoples R China

来源：

NANO LETTERS | 2015年 / 15卷 / 07期

基金：

英国工程与自然科学研究理事会;

关键词：

InAsSb; nanowire; self-catalyzed; molecular beam epitaxy; van der Waals; aspect ratio; graphite; graphene; SELF-CATALYZED GROWTH; DER-WAALS EPITAXY; ZNO NANOWIRES; SEEDED GROWTH; GRAPHENE; SB;

D O I：

10.1021/acs.nanolett.5b00411

中图分类号：

O6 [化学];

学科分类号：

0703 ;

摘要：

The monolithic integration of InAs1-xSbx semiconductor nanowires on graphitic substrates holds enormous promise for cost-effective, high-performance, and flexible devices in optoelectronics and high-speed electronics. However, the growth Of InAs1-xSbx nanowires with high aspect ratio essential for device applications is extremely challenging due to Sb-induced suppression of axial growth and enhancement in radial growth. We report the realization of high quality, vertically aligned, nontapered and ultrahigh aspect ratio InAs1-xSbx nanowires with Sb composition (x(Sb(%))) up to % similar to 12% grown by indium-droplet assisted molecular beam epitaxy on graphite substrate. Low temperature photoluminescence measurements show that the InAs1-xSbx nanowires exhibit bright band-to-band related,emission with a distinct redshift as a function of Sb composition providing further confirmation of successful Sb incorporation in as-grown nanowires. This study reveals that the graphite substrate is a more favorable platform for InAs1-xSbx nanowires that could lead to hybrid heterostructures possessing potential device applications in optoelectronics.

引用

页码：4348 / 4355

页数：8

共 57 条

[1]

[Anonymous], 1994, POWD DIFFR FIL 65 61

[2] Surfactant effect of antimony addition to the morphology of self-catalyzed InAs1-x Sb x nanowires [J].

Anyebe, E. A. ;

Rajpalke, M. K. ;

Veal, T. D. ;

Jin, C. J. ;

Wang, Z. M. ;

Zhuang, Q. D. .

NANO RESEARCH, 2015, 8 (04) :1309-1319

[3] Self-catalysed InAs1-xSbx nanowires grown directly on bare Si substrates [J].

Anyebe, E. A. ;

Zhuang, Q. .

MATERIALS RESEARCH BULLETIN, 2014, 60 :572-575

[4] Self-catalysed growth of InAs nanowires on bare Si substrates by droplet epitaxy [J].

Anyebe, E. A. ;

Zhuang, Q. ;

Sanchez, A. M. ;

Lawson, S. ;

Robson, A. J. ;

Ponomarenko, L. ;

Zhukov, A. ;

Kolosov, O. .

PHYSICA STATUS SOLIDI-RAPID RESEARCH LETTERS, 2014, 8 (07) :658-662

[5] Effect of As/In-flux on the growth of InAs nanowire by molecular beam epitaxy [J].

Babu, J. Bubesh ;

Yoh, Kanji .

JOURNAL OF CRYSTAL GROWTH, 2011, 323 (01) :301-303

[6] Nanowire-induced Wurtzite InAs Thin Film on Zinc-Blende InAs Substrate [J].

Bao, Jiming ;

Bell, David C. ;

Capasso, Federico ;

Erdman, Natasha ;

Wei, Dongguang ;

Froberg, Linus ;

Martensson, Thomas ;

Samuelson, Lars .

ADVANCED MATERIALS, 2009, 21 (36) :3654-+

[7] Synthesis and characterization of ZnO nanowires and their integration into dye-sensitized solar cells [J].

Baxter, J. B. ;

Walker, A. M. ;

van Ommering, K. ;

Aydil, E. S. .

NANOTECHNOLOGY, 2006, 17 (11) :S304-S312

[8] Enhanced Sb incorporation in InAsSb nanowires grown by metalorganic vapor phase epitaxy [J].

Borg, B. Mattias ;

Dick, Kimberly A. ;

Eymery, Joel ;

Wernersson, Lars-Erik .

APPLIED PHYSICS LETTERS, 2011, 98 (11)

[9] Nanowire-based gas sensors [J].

Chen, Xianping ;

Wong, Cell K. Y. ;

Yuan, Cadmus A. ;

Zhang, Guoqi .

SENSORS AND ACTUATORS B-CHEMICAL, 2013, 177 :178-195

[10] Fully Rollable Transparent Nanogenerators Based on Graphene Electrodes [J].

Choi, Dukhyun ;

Choi, Min-Yeol ;

Choi, Won Mook ;

Shin, Hyeon-Jin ;

Park, Hyun-Kyu ;

Seo, Ju-Seok ;

Park, Jongbong ;

Yoon, Seon-Mi ;

Chae, Seung Jin ;

Lee, Young Hee ;

Kim, Sang-Woo ;

Choi, Jae-Young ;

Lee, Sang Yoon ;

Kim, Jong Min .

ADVANCED MATERIALS, 2010, 22 (19) :2187-+

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