Physical Origin of the Gate Current Surge During Short-Circuit Operation of SiC MOSFET

被引：24

作者：

Boige, F. ^{[1
]}

Tremouilles, D. ^{[2
]}

Richardeau, F. ^{[1
]}

机构：

[1] Univ Toulouse, CNRS, INPT, UPS,LAPLACE Lab, F-31000 Toulouse, France

[2] Univ Toulouse, CNRS, LAAS, F-31000 Toulouse, France

来源：

IEEE ELECTRON DEVICE LETTERS | 2019年 / 40卷 / 05期

关键词：

4H-SiC MOSFET; short-circuit; gate oxide; Schottky emission; Fowler-Nordheim; TEMPERATURE-DEPENDENCE; OXIDE; PLANAR; DEVICES;

D O I：

10.1109/LED.2019.2896939

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

During the short circuit of a vertical 4H-SiC power MOSFET, a high gate current starts to flow through the gate dielectric. We demonstrate that the Schottky emission is the main physical mechanisms.

引用

页码：666 / 669

页数：4

共 50 条

[31] Effect of short-circuit stress on the degradation of the SiO2 dielectric in SiC power MOSFETs
Reigosa, Paula Diaz
Iannuzzo, Francesco
Ceccarelli, Lorenzo
MICROELECTRONICS RELIABILITY, 2018, 88-90 : 577 - 583
[32] Modeling and simulation methodology for considering delamination and bonding pull out in a SiC MOSFET chip during the short-circuit phase
Dumollard, Yannick
Batista, Emmanuel
Pecastaing, Laurent
Dienot, Jean-Marc
2021 IEEE 12TH INTERNATIONAL SYMPOSIUM ON POWER ELECTRONICS FOR DISTRIBUTED GENERATION SYSTEMS (PEDG), 2021,
[33] Short-Circuit Characterization of 10 kV 10A 4H-SiC MOSFET
Eni, Emanuel-Petre
Beczkowski, Szymon
Munk-Nielsen, Stig
Kerekes, Tamas
Teodorescu, Remus
APEC 2016 31ST ANNUAL IEEE APPLIED POWER ELECTRONICS CONFERENCE AND EXPOSITION, 2016, : 974 - 978
[34] Ensure an original and safe "fail-to-open" mode in planar and trench power SiC MOSFET devices in extreme short-circuit operation
Boige, F.
Richardeau, F.
Lefebvre, S.
Blaquiere, J. -M.
Guibaud, G.
Bourennane, A.
MICROELECTRONICS RELIABILITY, 2018, 88-90 : 598 - 603
[35] Impact of Gate Control on Short-Circuit Capability of SiC/Si Based Hybrid Switch
Jiang, Xi
Wang, Jun
Li, Zongjian
Deng, Linfeng
Lu, Jiwu
Wang, Xiaohao
Zeng, Cheng
Shen, Z. John
2017 IEEE ENERGY CONVERSION CONGRESS AND EXPOSITION (ECCE), 2017, : 2567 - 2572
[36] Investigation on the degradation indicators of short-circuit tests in 1.2 kV SiC MOSFET power modules
Du, H.
Reigosa, P. D.
Iannuzzo, F.
Ceccarelli, L.
MICROELECTRONICS RELIABILITY, 2018, 88-90 : 661 - 665
[37] Circuit Simulation Method for Insulated-Gate Bipolar Transistor Short-Circuit Operation with High Accuracy
Ozawa, Takaya
Yamamoto, Takao
Sugiura, Hiroto
Kondo, Yosuke
IEEJ JOURNAL OF INDUSTRY APPLICATIONS, 2023, 12 (04) : 835 - 841
[38] Impact of Repetitive Short-Circuit Tests on the Normal Operation of SiC MOSFETs Considering Case Temperature Influence
Du, He
Reigosa, Paula Diaz
Ceccarelli, Lorenzo
Iannuzzo, Francesco
IEEE JOURNAL OF EMERGING AND SELECTED TOPICS IN POWER ELECTRONICS, 2020, 8 (01) : 195 - 205
[39] Implications of short-circuit events on power cycling of 1.2-kV/20-A SiC MOSFET power modules
Du, H.
Ceccarelli, L.
Iannuzzo, F.
Reigosa, P. D.
MICROELECTRONICS RELIABILITY, 2019, 100
[40] Test Methodology for Short-Circuit Assessment and Safe Operation Identification for Power SiC MOSFETs
Oliveira, Joao
Reynes, Jean-Michel
Morel, Herve
Frey, Pascal
Perrotin, Olivier
Allirand, Laurence
Azzopardi, Stephane
Piton, Michel
Coccetti, Fabio
ENERGIES, 2024, 17 (21)

← 1 2 3 4 5 →