Thermal Performance of Violet and Blue Single-Quantum-Well Nonpolar m-Plane InGaN Light-Emitting Diodes

被引：4
作者：
Pfaff, Nathan A. [1 ]
Kelchner, Kathryn M. [1 ]
Feezell, Daniel F. [1 ]
Nakamura, Shuji [1 ,2 ]
DenBaars, Steven P. [1 ,2 ]
Speck, James S. [1 ]
机构：
[1] Univ Calif Santa Barbara, Dept Mat, Santa Barbara, CA 93106 USA
[2] Univ Calif Santa Barbara, Dept Elect & Comp Engn, Santa Barbara, CA 93106 USA
来源：
APPLIED PHYSICS EXPRESS | 2013年 / 6卷 / 09期
基金：
美国国家科学基金会;
关键词：
D O I：
10.7567/APEX.6.092104
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
We compare thermal performance of violet and blue single-quantum-well nonpolar m-plane InGaN/GaN light-emitting diodes (LEDs) over a temperature range from 25 to 140 degrees C. The hot/cold factor, defined as the ratio between the output power at high and low temperatures, improved as the quantum-well thickness increased from 3 to 10 nm. A hot/cold factor of 93% was measured under high injection current for the 10-nm-thick blue-emitting quantum well LED, indicating high thermal stability. The increase in hot/cold factor with current density for blue samples indicates possible contributions of Shockley-Read-Hall recombination for quantum wells of increased indium composition. (c) 2013 The Japan Society of Applied Physics
引用
收藏
页数：4
相关论文
共 22 条
  • [1] Spontaneous polarization and piezoelectric constants of III-V nitrides
    Bernardini, F
    Fiorentini, V
    Vanderbilt, D
    [J]. PHYSICAL REVIEW B, 1997, 56 (16): : 10024 - 10027
  • [2] Spontaneous emission of localized excitons in InGaN single and multiquantum well structures
    Chichibu, S
    Azuhata, T
    Sota, T
    Nakamura, S
    [J]. APPLIED PHYSICS LETTERS, 1996, 69 (27) : 4188 - 4190
  • [3] Self-heating effects at high pump currents in deep ultraviolet light-emitting diodes at 324 nm
    Chitnis, A
    Sun, J
    Mandavilli, V
    Pachipulusu, R
    Wu, S
    Gaevski, M
    Adivarahan, V
    Zhang, JP
    Khan, MA
    Sarua, A
    Kuball, M
    [J]. APPLIED PHYSICS LETTERS, 2002, 81 (18) : 3491 - 3493
  • [4] Droop in InGaN light-emitting diodes: A differential carrier lifetime analysis
    David, Aurelien
    Grundmann, Michael J.
    [J]. APPLIED PHYSICS LETTERS, 2010, 96 (10)
  • [5] Origin of pyramidal hillocks on GaN thin films grown on free-standing m-plane GaN substrates
    Farrell, R. M.
    Haeger, D. A.
    Chen, X.
    Gallinat, C. S.
    Davis, R. W.
    Cornish, M.
    Fujito, K.
    Keller, S.
    DenBaars, S. P.
    Nakamura, S.
    Speck, J. S.
    [J]. APPLIED PHYSICS LETTERS, 2010, 96 (23)
  • [6] Density-activated defect recombination as a possible explanation for the efficiency droop in GaN-based diodes
    Hader, J.
    Moloney, J. V.
    Koch, S. W.
    [J]. APPLIED PHYSICS LETTERS, 2010, 96 (22)
  • [7] Assessment of deep level defects in m-plane GaN grown by metalorganic chemical vapor deposition
    Henry, T. A.
    Armstrong, A.
    Kelchner, K. M.
    Nakamura, S.
    DenBaars, S. P.
    Speck, J. S.
    [J]. APPLIED PHYSICS LETTERS, 2012, 100 (08)
  • [8] Formation and reduction of pyramidal hillocks on m-plane {1100} GaN
    Hirai, A.
    Jia, Z.
    Schmidt, M. C.
    Farrell, R. M.
    DenBaars, S. P.
    Nakamura, S.
    Speck, J. S.
    Fujito, K.
    [J]. APPLIED PHYSICS LETTERS, 2007, 91 (19)
  • [9] Direct Measurement of Auger Electrons Emitted from a Semiconductor Light-Emitting Diode under Electrical Injection: Identification of the Dominant Mechanism for Efficiency Droop
    Iveland, Justin
    Martinelli, Lucio
    Peretti, Jacques
    Speck, James S.
    Weisbuch, Claude
    [J]. PHYSICAL REVIEW LETTERS, 2013, 110 (17)
  • [10] Improved electroluminescence on nonpolar m-plane InGaN/GaN quantum wells LEDs
    Kim, Kwang-Choong
    Schmidt, Mathew C.
    Sato, Hitoshi
    Wu, Feng
    Fellows, Natalie
    Saito, Makoto
    Fujito, Kenji
    Speck, James S.
    Nakamura, Shuji
    DenBaars, Steven P.
    [J]. PHYSICA STATUS SOLIDI-RAPID RESEARCH LETTERS, 2007, 1 (03): : 125 - 127
123