In situ spectroscopy of intrinsic Bi2Te3 topological insulator thin films and impact of extrinsic defects

被引：39

作者：

Ngabonziza, P. ^{[1
,2
]}

Heimbuch, R. ^{[1
,2
]}

de Jong, N. ^{[3
]}

Klaassen, R. A. ^{[1
,2
]}

Stehno, M. P. ^{[1
,2
]}

Snelder, M. ^{[1
,2
]}

Solmaz, A. ^{[1
,2
]}

Ramankutty, S. V. ^{[3
]}

Frantzeskakis, E. ^{[3
]}

van Heumen, E. ^{[3
]}

Koster, G. ^{[1
,2
]}

Golden, M. S. ^{[3
]}

Zandvliet, H. J. W. ^{[1
,2
]}

Brinkman, A. ^{[1
,2
]}

机构：

[1] Univ Twente, Fac Sci & Technol, NL-7500 AE Enschede, Netherlands

[2] Univ Twente, MESA Inst Nanotechnol, NL-7500 AE Enschede, Netherlands

[3] Univ Amsterdam, Van der Waals Zeeman Inst, NL-1098 XH Amsterdam, Netherlands

来源：

PHYSICAL REVIEW B | 2015年 / 92卷 / 03期

基金：

欧洲研究理事会;

关键词：

EPITAXIAL-GROWTH METHOD; SURFACE; BI2SE3; OXIDATION; CONDUCTION; STATES;

D O I：

10.1103/PhysRevB.92.035405

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

Combined in situ x-ray photoemission spectroscopy, scanning tunneling spectroscopy, and angle resolved photoemission spectroscopy of molecular beam epitaxy grown Bi2Te3 on lattice mismatched substrates reveal high quality stoichiometric thin films with topological surface states without a contribution from the bulk bands at the Fermi energy. The absence of bulk states at the Fermi energy is achieved without counterdoping. We observe that the surface morphology and electronic band structure of Bi2Te3 are not affected by in vacuo storage and exposure to oxygen, whereas major changes are observed when exposed to ambient conditions. These films help define a pathway towards intrinsic topological devices.

引用

页数：7

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