MBE grown GaAsBi/GaAs double quantum well separate confinement heterostructures

被引：13
|
作者：
Fan, Dongsheng [1 ,2 ]
Grant, Perry C. [1 ,2 ]
Yu, Shui-Qing [1 ,2 ]
Dorogan, Vitaliy G. [2 ]
Hu, Xian [2 ]
Zeng, Zhaoquan [2 ]
Li, Chen [2 ]
Hawkridge, Michael E. [2 ]
Benamara, Mourad [2 ]
Mazur, Yuriy I. [2 ]
Salamo, Gregory J. [2 ]
Johnson, Shane R. [3 ]
Wang, Zhiming M. [4 ]
机构：
[1] Univ Arkansas, Dept Elect Engn, Fayetteville, AR 72701 USA
[2] Univ Arkansas, Inst Nanosci & Engn, Fayetteville, AR 72701 USA
[3] Arizona State Univ, Sch Elect Comp & Energy Engn, Tempe, AZ 85287 USA
[4] Univ Elect Sci & Technol China, State Key Lab Elect Thin Films & Integrated Devic, Chengdu 610054, Peoples R China
来源：
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B | 2013年 / 31卷 / 03期
基金：
美国国家科学基金会;
关键词：
MOLECULAR-BEAM EPITAXY; THRESHOLD-CURRENT-DENSITY; LOW-TEMPERATURE GAAS; DEPENDENCE; ALLOY;
D O I：
10.1116/1.4792518
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
GaAsBi/GaAs double quantum wells and double quantum well separate confinement heterostructures are grown at low temperatures using molecular beam epitaxy. Methods of achieving identical quantum wells in double quantum well structures without growth interruption are proposed and implemented. Cross-sectional transmission electron microscopy and room temperature photoluminescence measurements indicate that the samples have excellent structural and optical properties. The high optical quality of the samples is attributed to the surfactant effect of Bi throughout the low temperature growth of GaAs and AlGaAs layers. The proposed approach can be extended to grow laser diode structures with multiple quantum well separate confinement heterostructures containing more identical quantum wells. (C) 2013 American Vacuum Society.
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页数：5
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