An Improved Power Constrained Simultaneous Noise and Input Matched 2.45 GHz CMOS NB-LNA

被引：0

作者：

Eshghabadi, Hamidreza Ameri ^{[1
]}

Eshghabadi, Farshad ^{[1
]}

Mustaffa, Mohd Tafir ^{[1
]}

Noh, Norlaili Mohd ^{[1
]}

Abd Manaf, Asrulnizam ^{[1
]}

Sidek, Othman ^{[2
]}

机构：

[1] Univ Sains Malaysia, Sch Elect & Elect Engn, Engn Campus, Nibong Tebal, Malaysia

[2] Univ Sains Malaysia, Collaborat Microelect Design Excellence Ctr, Kuala Lumpur, Malaysia

来源：

2012 IEEE INTERNATIONAL CONFERENCE ON CIRCUITS AND SYSTEMS (ICCAS) | 2012年

关键词：

Narrow-band; Low Noise Amplifier; Inductive source degenerated cascode; PCSNIM technique; CMOS;

D O I：

暂无

中图分类号：

TP301 [理论、方法];

学科分类号：

081202 ;

摘要：

This paper presents a fully integrated two-stage narrow-band low noise amplifier which optimized to work in 2.45 GHz center frequency. The topology of inductive source degenerated cascode based on power-constrained simultaneous noise and input matching (PCSNIM) technique has been adopted to make the LNA suitable for low power applications based on 0.13 mu m Silterra CMOS technology. Post layout simulation results show power gain of 22 dB, NF of 2.06 dB, S11 of -19 dB and S22 of -12 dB while consuming the DC current of 4 mA at supply voltage of 1.2V.

引用

页码：92 / 97

页数：6

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