Preparation of reaction-bonded silicon carbide with well controlled structure by tape casting method

被引：12

作者：

Luo, Z. H. ^{[1
,2
]}

Jiang, D. L. ^{[1
]}

Zhang, J. X. ^{[1
]}

Lin, Q. L. ^{[1
]}

Chen, Z. M. ^{[1
]}

Huang, Z. R. ^{[1
]}

机构：

[1] Chinese Acad Sci, State Key Lab High Performance Ceram & Superfine, Shanghai Inst Ceram, Shanghai 200050, Peoples R China

[2] Chinese Acad Sci, Grad Univ, Beijing 100049, Peoples R China

来源：

CERAMICS INTERNATIONAL | 2012年 / 38卷 / 03期

基金：

中国国家自然科学基金;

关键词：

Tape casting; Strength; SiC; CARBON PREFORM; SIC CERAMICS; MOLTEN SI; FABRICATION; TOUGHNESS; STRENGTH;

D O I：

10.1016/j.ceramint.2011.10.053

中图分类号：

TQ174 [陶瓷工业]; TB3 [工程材料学];

学科分类号：

0805 ; 080502 ;

摘要：

Tape casting is a reliable and cost effective method for producing thin ceramic sheets with uniform and tailored microstructures, especially for multilayered composite materials. In this paper, SiC/C tapes were prepared by tape casting method. After lamination and binder removal, porous preforms with homogeneous microstructure and narrow pore sizes distribution were developed. Then, dense reaction bonded SiC ceramics (RBSCs) were obtained by silicon infiltration into these preforms. The highest bending strength of the RBSCs can reach 410 +/- 14 MPa. Moreover, impregnation of phenolic resin into the porous preforms before silicon infiltration could help to develop RBSCs with lower residual silicon content and higher flexural strength which can be as high as 598 +/- 112 MPa. (C) 2011 Elsevier Ltd and Techna Group S.r.l. All rights reserved.

引用

页码：2125 / 2128

页数：4

共 50 条

[1] Preparation and investigation of silicon carbide materials on the basis of reaction-bonded silicon carbide
Samoilov V.M.
Porodzinskiy I.A.
Inorganic Materials: Applied Research, 2014, 5 (05) : 540 - 544
[2] Reaction-bonded silicon carbide refractories
Reddy, NK
MATERIALS CHEMISTRY AND PHYSICS, 2002, 76 (01) : 78 - 81
[3] Microstructure of reaction-bonded silicon carbide
Huang, Qingwei
Jin, Zhihao
Gao, Jiqiang
Wang, Yonglan
Hsi-An Chiao Tung Ta Hsueh/Journal of Xi'an Jiaotong University, 2000, 34 (02): : 89 - 91
[4] Structure Evolution and Properties Modification for Reaction-Bonded Silicon Carbide
Li, Wei
Zhang, Ge
Cui, Congcong
Bao, Jianxun
Guo, Conghui
Xu, Chuanxiang
Zhang, Wei
Zhu, Wanli
MATERIALS, 2022, 15 (24)
[5] Reaction-bonded silicon carbide by reactive infiltration
Sangsuwan, P
Orejas, JA
Gatica, JE
Tewari, SN
Singh, M
INDUSTRIAL & ENGINEERING CHEMISTRY RESEARCH, 2001, 40 (23) : 5191 - 5198
[6] A REACTION-BONDED SILICON-CARBIDE COMPOSITION
GRANT, JF
AMERICAN CERAMIC SOCIETY BULLETIN, 1981, 60 (09): : 929 - 929
[7] Joining of pure carbide reaction-bonded silicon carbide ceramics
Wu, QD
Sun, F
Ji, XL
Yan, YG
Hao, H
Wang, H
RARE METAL MATERIALS AND ENGINEERING, 2005, 34 : 515 - 518
[8] Effect of additives on resistivity of reaction-bonded silicon carbide
Hsi-An Chiao Tung Ta Hsueh/Journal of Xi'an Jiaotong University, 2000, 34 (02): : 92 - 94
[9] REACTION-BONDED SILICON-CARBIDE AS A MATRIX FOR GMCS
MESSNER, RP
CHIANG, YM
UHLMANN, DR
AMERICAN CERAMIC SOCIETY BULLETIN, 1986, 65 (11): : 1482 - 1482
[10] Joining of reaction-bonded silicon carbide using a polysiloxane
Liu, Hongli
Li, Shujie
Chen, Zhijun
Xiyou Jinshu Cailiao Yu Gongcheng/Rare Metal Materials and Engineering, 2006, 35 (01): : 134 - 137

← 1 2 3 4 5 →