The structure of hydrogenated microcrystalline silicon (pc-Si:H) TFTs deposited by PECVD

被引：0
|
作者：
Wu, C. -Y. [1 ]
Tsai, Y. -Y. [1 ]
Lai, C. -C. [1 ]
Ma, C. -H. [1 ]
Chien, Y. -H. [1 ]
Uen, W. -Y. [2 ]
机构：
[1] Chunghwa Picture Tubes Ltd, 1127 Heping Rd, Tao Yuan 334, Taiwan
[2] Chung Yuan Christian Univ, Chungli 32023, Taiwan
来源：
IDW '06: PROCEEDINGS OF THE 13TH INTERNATIONAL DISPLAY WORKSHOPS, VOLS 1-3 | 2006年
关键词：
D O I：
暂无
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
Hydrogenated microcrystalline silicon (Pc-Si.,H) TFTs are prepared by PECVD with the controlling factors of this experiments included SiH4/H2 gas flow rate, RF power, and pressure, respectively. The surface morphology of pc-Si:H thin film after secco etching are observed by SEM and AFM, and grain size is about 20-30nm. The behaviors of the threshold voltage and field-effect mobility of mu c-Si:H TFTs under the bias gate stress, light illuminated and thermal stress experiments indicates unobvious difference to the a-Si TFTs. The crystallization distribution by the Raman spectrometer and HRTEM image, it is proven the transistor channel between the mu c-Si and SiNx interface its structure was still the amorphous state.
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页码：765 / +
页数：2
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