Voltage-Controlled Nonvolatile Molecular Memory of an Azobenzene Monolayer through Solution-Processed Reduced Graphene Oxide Contacts

被引：44

作者：

Min, Misook ^{[1
]}

Seo, Sohyeon ^{[1
]}

Lee, Sae Mi ^{[1
]}

Lee, Hyoyoung ^{[1
,2
]}

机构：

[1] Sungkyunkwan Univ, Dept Chem, Suwon, Gyeonggi Do, South Korea

[2] Sungkyunkwan Univ, Dept Energy Sci, Suwon, Gyeonggi Do, South Korea

来源：

ADVANCED MATERIALS | 2013年 / 25卷 / 48期

基金：

新加坡国家研究基金会;

关键词：

reduced graphene oxide; molecular electronics; self-assembled monolayers; voltage-controlled molecular memory; azobenzenes; PHOTOISOMERIZATION DYNAMICS; FILMS; MICROSCOPY; TRANSPORT; INSULATOR; STATE; GAP;

D O I：

10.1002/adma.201303335

中图分类号：

O6 [化学];

学科分类号：

0703 ;

摘要：

The solution-processed fabrication of an azobenzene (ABC10) monolayer-based nonvolatile memory device on a reduced graphene oxide (rGO) electrode is successfully accomplished. Trans - cis isomerizations of ABC10 between two rGO electrodes in a crossbar device are controlled by applied voltage. An rGO soft-contact top electrode plays an important role in the conformational-change- dependent conductance switching process of an ABC10 monolayer. © 2013 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

引用

页码：7045 / 7050

页数：6

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