Role of the electron blocking layer in the graded-index separate confinement heterostructure nitride laser diodes

被引：9

作者：

Bojarska, Agata ^{[1
]}

Goss, Jakub ^{[1
]}

Stanczyk, Szymon ^{[1
,2
]}

Makarowa, Irina ^{[1
]}

Schiavon, Dario ^{[1
,2
]}

Czernecki, Robert ^{[1
,2
]}

Suski, Tadeusz ^{[1
]}

Perlin, Piotr ^{[1
,2
]}

机构：

[1] Unipress, Inst High Pressure Phys, Sokolowska 29-37, PL-01142 Warsaw, Poland

[2] TopGaN Ltd, Sokolowska 29-37, PL-01142 Warsaw, Poland

来源：

SUPERLATTICES AND MICROSTRUCTURES | 2018年 / 116卷

关键词：

Nitride laser diode; Electron blocking layer; Superlattice;

D O I：

10.1016/j.spmi.2018.02.016

中图分类号：

O469 [凝聚态物理学];

学科分类号：

070205 ;

摘要：

In this work, we investigate the role of the electron blocking layer (EBL) in laser diodes based on a graded index separate confinement heterostructure. We compare two sets of devices with very different EBL aluminum composition (3% and 12%) and design (graded and superlattice). The results of electro-optical characterization of these laser diodes reveal surprisingly modest role of electron blocking layer composition in determination of the threshold current and the differential efficiency values. However, EBL structure influences the operating voltage, which is decreased for devices with lower EBL and superlattice EBL. We observe also the differences in the thermal stability of devices characteristic temperature is lower for lasers with 3% Al in EBL. (C) 2018 Elsevier Ltd. All rights reserved.

引用

页码：114 / 121

页数：8

共 18 条

[1] High-power 400-nm-band AlGaInN-based laser diodes with low aspect ratio [J].

Asano, T ;

Takeya, M ;

Tojyo, T ;

Mizuno, T ;

Ikeda, S ;

Shibuya, K ;

Hino, T ;

Uchida, S ;

Ikeda, M .

APPLIED PHYSICS LETTERS, 2002, 80 (19) :3497-3499

[2] Negative-T0 InGaN laser diodes and their degradation [J].

Bojarska, Agata ;

Marona, Lucja ;

Makarowa, Irina ;

Czernecki, Robert ;

Leszczynski, Mike ;

Suski, Tadeusz ;

Perlin, Piotr .

APPLIED PHYSICS LETTERS, 2015, 106 (17)

[3] Emission wavelength dependence of characteristic temperature of InGaN laser diodes [J].

Bojarska, Agata ;

Goss, Jakub ;

Marona, Lucja ;

Kafar, Anna ;

Stanczyk, Szymon ;

Makarowa, Irina ;

Najda, Stephen ;

Targowski, Grzegorz ;

Suski, Tadek ;

Perlin, Piotr .

APPLIED PHYSICS LETTERS, 2013, 103 (07)

[4] Carrier recombination mechanisms and efficiency droop in GaInN/GaN light-emitting diodes [J].

Dai, Qi ;

Shan, Qifeng ;

Wang, Jing ;

Chhajed, Sameer ;

Cho, Jaehee ;

Schubert, E. Fred ;

Crawford, Mary H. ;

Koleske, Daniel D. ;

Kim, Min-Ho ;

Park, Yongjo .

APPLIED PHYSICS LETTERS, 2010, 97 (13)

[5] Excellent crystallinity of truly bulk ammonothermal GaN [J].

Dwilinski, R. ;

Doradzinski, R. ;

Garczynski, J. ;

Sierzputowski, L. P. ;

Puchalski, A. ;

Kanbara, Y. ;

Yagi, K. ;

Minakuchi, H. ;

Hayashi, H. .

JOURNAL OF CRYSTAL GROWTH, 2008, 310 (17) :3911-3916

[6]

Jia-Xing W., 2011, CHINESE PHYS LETT, V28

[7] Effect of p-AlxGa1-xN electron blocking layer on optical and electrical properties in GaN-based light emitting diodes [J].

Kim, Ki-Hyun ;

Lee, Sang-Won ;

Lee, Sung-Nam ;

Kim, Jihoon .

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 2012, 30 (06)

[8] On carrier spillover in c- and m-plane InGaN light emitting diodes [J].

Lee, J. ;

Li, X. ;

Ni, X. ;

Ozgur, U. ;

Morkoc, H. ;

Paskova, T. ;

Mulholland, G. ;

Evans, K. R. .

APPLIED PHYSICS LETTERS, 2009, 95 (20)

[9]

Morkoc H., 2008, Handbook of Nitride Semiconductors and Devices: Electronic and Optical Processes in Wide Band Gap Semiconductors, V2

[10]

Mukai T., 1988, JPN J APPL PHYS, V37

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