Beneficial effects of sputtered ZnO:Al protection layer on SnO2:F for high-deposition rate hot-wire CVD p-i-n solar cells

被引：23

作者：

Franken, RH ^{[1
]}

van der Werf, CHM ^{[1
]}

Löffler, J ^{[1
]}

Rath, JK ^{[1
]}

Schropp, REI ^{[1
]}

机构：

[1] Univ Utrecht, Debye Inst, SID Phys Devices, NL-3508 TA Utrecht, Netherlands

来源：

THIN SOLID FILMS | 2006年 / 501卷 / 1-2期

关键词：

solar cells; tin oxide; zinc oxide;

D O I：

10.1016/j.tsf.2005.07.106

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

Hot-wire chemical vapor deposition (HWCVD) has been shown to be promising for depositing thin film silicon materials at higher deposition rate than conventional plasma-enhanced CVD. Due to the higher atomic H density in the gas phase, it is not straightforward to utilize the full benefit of the higher deposition rate of the HWCVD in thin film solar cells in the p-i-n configuration on textured SnO2:F (superstrate configuration). The Transparent Conducting Oxide (TCO) is found to be very sensitive for high atomic hydrogen ambient. This paper presents our investigations on the implementation of ultrathin ZnO:Al protection layers, allowing higher temperatures during i-layer deposition, and thus, higher deposition rates. (c) 2005 Elsevier B.V. All rights reserved.

引用

页码：47 / 50

页数：4

共 10 条

[1] Preparation of a-Si:H and a-SiGe:H i-layers for nip solar cells at high deposition rates using a Very High Frequency technique [J].

Jones, SJ ;

Deng, X ;

Liu, T ;

Izu, M .

AMORPHOUS AND MICROCRYSTALLINE SILICON TECHNOLOGY-1998, 1998, 507 :113-118

[2] Amorphous silicon films and solar cells deposited by HWCVD at ultra-high deposition rates [J].

Mahan, AH ;

Xu, Y ;

Iwaniczko, E ;

Williamson, DL ;

Nelson, BP ;

Wang, Q .

JOURNAL OF NON-CRYSTALLINE SOLIDS, 2002, 299 :2-8

[3] Influence of atomic hydrogen on transparent conducting oxides during hydrogenated amorphous and microcrystalline Si preparation by catalytic chemical vapor deposition [J].

Masuda, A ;

Imamori, K ;

Matsumura, H .

THIN SOLID FILMS, 2002, 411 (01) :166-170

[4] Hydrogen-radical durability of TiO2 thin films for protecting transparent conducting oxide for Si thin film solar cells [J].

Natsuhara, H ;

Ohashi, T ;

Ogawa, S ;

Yoshida, N ;

Itoh, T ;

Nonomura, S ;

Fukawa, M ;

Sato, K .

THIN SOLID FILMS, 2003, 430 (1-2) :253-256

[5] Device-quality polycrystalline and amorphous silicon films by hot-wire chemical vapour deposition [J].

Schropp, REI ;

Feenstra, KE ;

Molenbroek, EC ;

Meiling, H ;

Rath, JK .

PHILOSOPHICAL MAGAZINE B-PHYSICS OF CONDENSED MATTER STATISTICAL MECHANICS ELECTRONIC OPTICAL AND MAGNETIC PROPERTIES, 1997, 76 (03) :309-321

[6] Present status of micro- and polycrystalline silicon solar cells made by hot-wire chemical vapor deposition [J].

Schropp, REI .

THIN SOLID FILMS, 2004, 451 :455-465

[7]

SCHROPP REI, 2004, MAT RES SOC P, V808

[8] Amorphous silicon deposited by hot-wire CVD for application in dual junction solar cells [J].

van Veen, MK ;

Schropp, REI .

THIN SOLID FILMS, 2002, 403 :135-138

[9]

VANVEEN M, 2003, THESIS UU

[10] Reduction of tin oxide by hydrogen radicals [J].

Wallinga, J ;

Arnoldbik, WM ;

Vredenberg, AM ;

Schropp, REI ;

van der Weg, WF .

JOURNAL OF PHYSICAL CHEMISTRY B, 1998, 102 (32) :6219-6224

← 1 →