Low-Temperature Performance of Nanoscale Perpendicular Magnetic Tunnel Junctions With Double MgO-Interface Free Layer

被引：12
作者：
Cao, Kaihua [1 ,2 ,3 ]
Li, Huisong [1 ]
Cai, Wenlong [1 ]
Wei, Jiaqi [1 ,2 ,3 ]
Wang, Lezhi [1 ,2 ,3 ]
Hu, Yanpeng [3 ]
Jiang, Qifeng [3 ]
Cui, Hushan [2 ,3 ]
Zhao, Chao [2 ,3 ]
Zhao, Weisheng [1 ,2 ,4 ]
机构：
[1] Beihang Univ, Fert Beijing Inst, BDBC, Beijing 100191, Peoples R China
[2] Beihang Univ, Sch Elect & Informat Engn, Beijing 100191, Peoples R China
[3] Chinese Acad Sci, Inst Microelect, Beijing 100029, Peoples R China
[4] Beihang Univ, Qingdao Res Inst, Beihang Geortek Joint Microelect Inst, Qingdao 266000, Peoples R China
来源：
IEEE TRANSACTIONS ON MAGNETICS | 2019年 / 55卷 / 03期
基金：
中国国家自然科学基金;
关键词：
Perpendicular magnetic tunnel junction (p-MTJ); spin transfer torque (STT); spintronics; temperature dependence; SPIN; MAGNETORESISTANCE;
D O I：
10.1109/TMAG.2018.2877446
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
The temperature dependence of magnetoresistance and switching characterization based on spin transfer torque (STT) effect of perpendicular magnetic tunnel junctions (p-MTJs) with MgO/CoFeB/W/CoFeB/MgO double-interface free layer was studied. The tunneling magnetoresistance (TMR) ratio increases from 95% to 176% for both 84 and 64 nm-diameter p-MTJs, upon decreasing the temperature from 400 to 20 K. This change of TMR is dominated by a steady increase in the resistance of antiparallel state while the parallel state conductance remains almost constant. Switching behavior at various temperatures is investigated for pulse voltage-dependent STT measurements; resistance versus voltage loops for both the switching directions become more symmetric with decreasing temperature. Furthermore, low-temperature measurements of magnetic properties suggest that the effect of stray field for STT becomes weaker as the temperature decreases, which suggests the p-MTJs design for cryogenic memories.
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页数：4
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