Improvement of bonding strength between Au Ti and SiO2 films by Si layer insertion

被引：21

作者：

Nagata, H ^{[1
]}

Shinriki, T

Shima, K

Tamai, M

Haga, EM

机构：

[1] Sumitomo Osaka Cement Co Ltd, Optoelect Res Div, New Technol Res Technol, Funabashi, Chiba 2748601, Japan

[2] Sumitomo Osaka Cement Co Ltd, Div Optoelect, Funabashi, Chiba 2748601, Japan

[3] Sumitomo Osaka Cement Co Ltd, Adv Mat Res Div, New Technol Res Labs, Funabashi, Chiba 2748601, Japan

来源：

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS | 1999年 / 17卷 / 03期

关键词：

D O I：

10.1116/1.581676

中图分类号：

TB3 [工程材料学];

学科分类号：

0805 ; 080502 ;

摘要：

In the fabrication of broad band optical waveguide modulators, a certain technology must be used to prepare 15-20-mu m-thick Au electrodes on the SiO2 surface covering the waveguides. A thin transition metal film is commonly inserted between the Bu and SiO2 to improve adhesive strength. The transition metal film used in this stud!: is Ti. Hen, the Si02 surface is precoated with Si prior to the Ti film formation, demonstrating a significant improvement in adhesive strength. The Si layer works as a barrier against oxidation of the Ti film due to the SiO2, leading to a homogenous film growth of metallic Ti. (C) 1999 American Vacuum Society. [S0734-2101(99)02503-8].

引用

页码：1018 / 1023

页数：6

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