Effect of hydrogen and thermal conductivity on nucleation of polycrystalline Si by excimer laser annealing

被引：14

作者：

Kawamoto, N

Matsuo, N

Abe, H

Anwar, F

Hasegawa, I

Yamano, K

Hamada, H

机构：

[1] Yamaguchi Univ, Dept Elect & Elect Engn, Ube, Yamaguchi 7558611, Japan

[2] Himeji Inst Technol, Dept Mat Engn, Himeji, Hyogo 6712201, Japan

[3] Sanyo Elect Co Ltd, Mat & Devices Res Ctr, Gifu 5030195, Japan

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS | 2004年 / 43卷 / 01期

关键词：

polycrystalline silicon; excimer laser annealing; Raman spectroscopy; crystallinity; silicon nitride; thermal conductivity;

D O I：

10.1143/JJAP.43.293

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

The influence of hydrogen on the nucleation of polycrystalline Si (poly-Si) during excimer laser annealing (ELA) of amorphous silicon (a-Si) films was investigated in detail. The results of Raman spectroscopy reveal that the internal stress and defect density in the poly-Si films strongly depend on substrate structures which are made of quartz, SiO2/SiN/glass and SiO2/glass. From the thermal-desorption spectrum and surface morphology characterization using scanning electron microscopy (SEM), it was clarified that the origin of the difference is due to both the hydrogen incorporated in the a-Si from the SiN film by diffusion via SiO2 and the thermal conductivity of the SiO2, SiN and quartz. We also discuss the nucleation process taking into account the hydrogen burst and the thermal conductivity of the substrates.

引用

页码：293 / 298

页数：6

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