Polarization relaxation and charge injection in thin films of poly(vinylidene fluoride/trifluoroethylene) copolymer

被引:11
作者
Mai, Manfang [1 ]
Martin, Bjoern [1 ]
Kliem, Herbert [1 ]
机构
[1] Univ Saarland, Inst Elect Engn Phys, D-66123 Saarbrucken, Germany
关键词
FERROELECTRIC PROPERTIES; VINYLIDENE FLUORIDE;
D O I
10.1063/1.4817508
中图分类号
O59 [应用物理学];
学科分类号
摘要
Polarization relaxation effects and charge injection in poly(vinylidene fluoride/trifluoroethylene) thin films are investigated in a thickness range between 60 nm and 400 nm. In time domain measurements of polarization reversal, the switching transients exhibit two stages: a rapid increase of polarization followed by a continuous slow increase lasting for several decades. This continuous increase of the polarization corresponds to a t(-alpha) (Kohlrausch law) behaviour of the current density in the long time range. For a constant electric field, these currents in the long time range are independent of the sample thickness as expected for a relaxational volume polarization effect. Furthermore, the isochronal polarization and depolarization currents saturate at high fields. We described the experiments using an asymmetric double well potential model with a distribution of relaxation times in which dipoles are fluctuating thermally activated between the two minima. As temperature increases, charge injection sets in. The charging currents then deviate from the t(-alpha) behaviour and become constant in time. The discharging currents are found to be a superposition of dipole relaxational currents and space charge relaxational currents. In the short time range, only the dipole relaxational currents are found. After several seconds, a space charge relaxation current with a pronounced minimum in time sets in, whose time constant shifts to shorter values with increasing temperature. (C) 2013 AIP Publishing LLC.
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页数:8
相关论文
共 31 条
[1]  
Blinov L. M., 2000, Physics-Uspekhi, V43, P243, DOI 10.1070/PU2000v043n03ABEH000639
[2]   Two-dimensional ferroelectric films [J].
Bune, AV ;
Fridkin, VM ;
Ducharme, S ;
Blinov, LM ;
Palto, SP ;
Sorokin, AV ;
Yudin, SG ;
Zlatkin, A .
NATURE, 1998, 391 (6670) :874-877
[3]   Ferroelectric polymer Langmuir-Blodgett films for nonvolatile memory applications [J].
Ducharme, S ;
Reece, TJ ;
Othon, CM ;
Rannow, RK .
IEEE TRANSACTIONS ON DEVICE AND MATERIALS RELIABILITY, 2005, 5 (04) :720-735
[4]   DC CONDUCTION AND DIELECTRIC ABSORPTION IN PVF2 [J].
FARIA, RM ;
GROSS, B ;
FERREIRA, GFL .
JOURNAL OF APPLIED PHYSICS, 1984, 55 (11) :4130-4131
[5]  
Froehlich H., 1949, THEORY DIELECTRICS
[6]   Recent advances in ferroelectric polymer thin films for memory applications [J].
Furukawa, T. ;
Takahashi, Y. ;
Nakajima, T. .
CURRENT APPLIED PHYSICS, 2010, 10 (01) :E62-E67
[7]   FERROELECTRIC PROPERTIES OF VINYLIDENE FLUORIDE COPOLYMERS [J].
FURUKAWA, T .
PHASE TRANSITIONS, 1989, 18 (3-4) :143-211
[8]   Restricted domain growth and polarization reversal kinetics in ferroelectric polymer thin films [J].
Gysel, Roman ;
Stolichnov, Igor ;
Tagantsev, Alexander K. ;
Setter, Nava ;
Mokry, Pavel .
JOURNAL OF APPLIED PHYSICS, 2008, 103 (08)
[9]   RELAXATIONAL POLARIZATION AND CHARGE INJECTION IN THIN-FILMS OF SILICON-NITRIDE [J].
HOMANN, M ;
KLIEM, H .
MICROELECTRONICS JOURNAL, 1994, 25 (07) :559-566
[10]   Extrinsic versus intrinsic ferroelectric switching: experimental investigations using ultra-thin PVDF Langmuir-Blodgett films [J].
Kliem, H ;
Tadros-Morgane, R .
JOURNAL OF PHYSICS D-APPLIED PHYSICS, 2005, 38 (12) :1860-1868