Photoluminescence from GaAs nanodisks fabricated by using combination of neutral beam etching and atomic hydrogen-assisted molecular beam epitaxy regrowth

被引：19
作者：
Kaizu, Toshiyuki [1 ,2 ]
Tamura, Yosuke [2 ,3 ]
Igarashi, Makoto [2 ,3 ]
Hu, Weiguo [2 ,3 ]
Tsukamoto, Rikako [2 ,3 ]
Yamashita, Ichiro [2 ,4 ]
Samukawa, Seiji [2 ,3 ,5 ]
Okada, Yoshitaka [1 ,2 ]
机构：
[1] Univ Tokyo, Res Ctr Adv Sci & Technol, Meguro Ku, Tokyo 1538904, Japan
[2] CREST, Japan Sci & Technol Agcy, Chiyoda Ku, Tokyo 1020075, Japan
[3] Tohoku Univ, Inst Fluid Sci, Aoba Ku, Sendai, Miyagi 9808577, Japan
[4] Nara Inst Sci & Technol, Grad Sch Mat Sci, Ikoma, Nara 6300192, Japan
[5] Tohoku Univ, WPI Adv Inst Mat Res, Aoba Ku, Sendai, Miyagi 9808577, Japan
来源：
APPLIED PHYSICS LETTERS | 2012年 / 101卷 / 11期
关键词：
Hydrogen - Etching - Molecular beam epitaxy - III-V semiconductors - Photoluminescence - Fabrication - Semiconducting gallium - Molecular beams;
D O I：
10.1063/1.4752233
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
We have fabricated GaAs nanodisk (ND) structures by using a combination of neutral beam etching process and atomic hydrogen-assisted molecular beam epitaxy regrowth. We have observed clear photoluminescence (PL) emissions from GaAs NDs. The peak energy showed a blueshift due to the quantum confinement in three spatial dimensions, and it agreed with the theoretically estimated transition energy. The PL results also showed that the cap-layer disks act as radiative recombination centers. We have confirmed that the PL emission originates from the GaAs NDs, and our approach is effective for the fabrication of high quality ND structures. (C) 2012 American Institute of Physics. [http://dx.doi.org/10.1063/1.4752233]
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页数：4
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