Study of Frequency-to-Voltage Converter immunity to fast transient pulses
被引:0
作者:
Gao, Yuan
论文数: 0引用数: 0
h-index: 0
机构:
NXP Semicond, ESD EMC Team Cent Org Automot Div, Toulouse, FranceNXP Semicond, ESD EMC Team Cent Org Automot Div, Toulouse, France
Gao, Yuan
[1
]
Abouda, Kamel
论文数: 0引用数: 0
h-index: 0
机构:
NXP Semicond, ESD EMC Team Cent Org Automot Div, Toulouse, FranceNXP Semicond, ESD EMC Team Cent Org Automot Div, Toulouse, France
Abouda, Kamel
[1
]
Beges, Remi
论文数: 0引用数: 0
h-index: 0
机构:
NXP Semicond, ESD EMC Team Cent Org Automot Div, Toulouse, FranceNXP Semicond, ESD EMC Team Cent Org Automot Div, Toulouse, France
Beges, Remi
[1
]
Besse, Patrice
论文数: 0引用数: 0
h-index: 0
机构:
NXP Semicond, ESD EMC Team Cent Org Automot Div, Toulouse, FranceNXP Semicond, ESD EMC Team Cent Org Automot Div, Toulouse, France
Besse, Patrice
[1
]
机构:
[1] NXP Semicond, ESD EMC Team Cent Org Automot Div, Toulouse, France
来源:
2016 ASIA-PACIFIC INTERNATIONAL SYMPOSIUM ON ELECTROMAGNETIC COMPATIBILITY (APEMC)
|
2016年
关键词:
FVC;
ISO pulse;
immunity;
fast transient;
D O I:
暂无
中图分类号:
TM [电工技术];
TN [电子技术、通信技术];
学科分类号:
0808 ;
0809 ;
摘要:
In this paper the susceptibility of a Frequency-to-Voltage Convertor (FVC) to harsh automotive EMC/ESD environment using different system level ISO pulses are investigated by circuit simulations. A simplification methodology of power tree is presented and used for simulation acceleration. We evaluated the performance of the on-chip FCV under several different standard ISO pulses. As the results, we have clarified the mechanism of the FVC malfunction.
引用
收藏
页码:849 / 851
页数:3
相关论文
共 2 条
[1]
Gao Y, 2012, ASIA-PAC INT SYM ELE, P389, DOI 10.1109/APEMC.2012.6238005