Anisotropic interface contribution to the spin-orbit interaction in quantum wells

被引：8

作者：

Alekseev, P. S. ^{[1
]}

机构：

[1] Russian Acad Sci, Ioffe Phys Tech Inst, St Petersburg 194021, Russia

来源：

JETP LETTERS | 2013年 / 98卷 / 02期

基金：

俄罗斯基础研究基金会;

关键词：

GaAs; Electron Spin Resonance; JETP Letter; Orbit Interaction; Plane Component;

D O I：

10.1134/S0021364013150022

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

Experimental data on the anisotropy of electron spin resonance in a GaAs/AlGaAs quantum well have been interpreted. In has been shown that the spin-orbit interaction in quantum wells includes, in addition to the isotropic Bychkov-Rashba and anisotropic volume Dresselhaus contributions, the anisotropic contribution determined by the structure of interfaces.

引用

页码：84 / 87

页数：4

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