Growth and properties of CdSe thin films by a new process of electrochemical selenization of Cd metal layers

被引：8

作者：

Rastogi, AC ^{[1
]}

Balakrishnan, KS ^{[1
]}

Jain, K ^{[1
]}

机构：

[1] Natl Phys Lab, Div Mat, New Delhi 110012, India

来源：

MATERIALS RESEARCH BULLETIN | 1999年 / 34卷 / 08期

关键词：

semiconductors; thin films; X-ray diffraction; electrochemical properties; optical properties;

D O I：

10.1016/S0025-5408(99)00115-4

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

Growth and properties of cadmium selenide semiconductor thin films prepared by a new electrochemical selenization process (ECS) are described. The as-formed CdSe thin films have large (similar to 1 mu m) crystallites in hexagonal modification. The differential selenization kinetics in the intra- and intergrain regions causes the formation of stoichiometric CdSe film to be highly dependent on time. CdSe composition is independent of selenization parameters. Two direct optical band gaps at 2.09 and 1.44 eV, as opposed to a single gap at 1.7 eV, are observed in CdSe film selenized at 0.6 and 0.4 mA/cm(2) current densities, respectively. A mechanism of selenization based on Cd ionization by oxygen reduction and reaction with cathodically released Se ions is proposed for the CdSe film formation. (C) 1999 Elsevier Science Ltd.

引用

页码：1319 / 1332

页数：14

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