In situ observation of filamentary conducting channels in an asymmetric Ta2O5-x/TaO2-x bilayer structure

被引：319

作者：

Park, Gyeong-Su ^{[1
]}

Kim, Young Bae ^{[1
]}

Park, Seong Yong ^{[1
]}

Li, Xiang Shu ^{[1
]}

Heo, Sung ^{[1
]}

Lee, Myoung-Jae ^{[1
]}

Chang, Man ^{[1
]}

Kwon, Ji Hwan ^{[2
]}

Kim, M. ^{[2
]}

Chung, U-In ^{[1
]}

Dittmann, Regina ^{[3
]}

Waser, Rainer ^{[3
]}

Kim, Kinam ^{[1
]}

机构：

[1] Samsung Elect Co Ltd, Samsung Adv Inst Technol, Yongin 446712, South Korea

[2] Seoul Natl Univ, Dept Mat Sci & Engn, Seoul 151744, South Korea

[3] Julich Aachen Res Alliance, Sect Fundamentals Future Informat Technol JARA FI, D-52425 Julich, Germany

来源：

NATURE COMMUNICATIONS | 2013年 / 4卷

基金：

新加坡国家研究基金会;

关键词：

RESISTIVE SWITCHING MEMORIES; TRANSITION-METAL OXIDES; 1ST PRINCIPLES; MECHANISM; NANOFILAMENTS; DEFECTS; DEVICE; RERAM;

D O I：

10.1038/ncomms3382

中图分类号：

O [数理科学和化学]; P [天文学、地球科学]; Q [生物科学]; N [自然科学总论];

学科分类号：

07 ; 0710 ; 09 ;

摘要：

Electrically induced resistive switching in metal insulator-metal structures is a subject of increasing scientific interest because it is one of the alternatives that satisfies current requirements for universal non-volatile memories. However, the origin of the switching mechanism is still controversial. Here we report the fabrication of a resistive switching device inside a transmission electron microscope, made from a Pt/SiO2/a-Ta2O5-x/a-TaO2-x/Pt structure, which clearly shows reversible bipolar resistive switching behaviour. The current-voltage measurements simultaneously confirm each of the resistance states (set, reset and breakdown). In situ scanning transmission electron microscope experiments verify, at the atomic scale, that the switching effects occur by the formation and annihilation of conducting channels between a top Pt electrode and a TaO2-x base layer, which consist of nanoscale TaO1-x filaments. Information on the structure and dimensions of conductive channels observed in situ offers great potential for designing resistive switching devices with the high endurance and large scalability.

引用

页数：9

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