Polymorphism of GeSbTe Superlattice Nanowires

被引：16

作者：

Jung, Chan Su ^{[1
]}

Kim, Han Sung ^{[1
]}

Im, Hyung Soon ^{[1
]}

Seo, Young Seok ^{[1
]}

Park, Kidong ^{[1
]}

Back, Seung Hyuk ^{[1
]}

Cho, Yong Jae ^{[1
]}

Kim, Chang Hyun ^{[1
]}

Park, Jeunghee ^{[1
]}

Ahn, Jae-Pyoung ^{[2
]}

机构：

[1] Korea Univ, Dept Chem, Jochiwon 339700, South Korea

[2] Korea Inst Sci & Technol, Adv Anal Ctr, Seoul 136791, South Korea

来源：

NANO LETTERS | 2013年 / 13卷 / 02期

关键词：

GeSbTe; nanowires; polymorphism; superlattices; phase change; cubicrhombohedral transition; TRANSMISSION ELECTRON-MICROSCOPY; THIN-FILMS; PHASE; TEMPERATURE; VACANCIES; SYSTEM; MEMORY; SERIES; GETE;

D O I：

10.1021/nl304056k

中图分类号：

O6 [化学];

学科分类号：

0703 ;

摘要：

Scaling-down of phase change materials to a nanowire (NW) geometry is critical to a fast switching speed of nonvolatile memory devices. Herein, we report novel composition-phase-tuned GeSbTe NWs, synthesized by a chemical vapor transport method, which guarantees promising. applications in the field of nanoscale electric devices. As the Sb content increased, they showed a distinctive rhombohedral-cubic-rhombohedral phase evolution. Remarkable superlattice structures were identified for the Ge8Sb2Te11, Ge3Sb2Te6, Ge3Sb8Te6, and Ge2Sb7Te4 NWs. The coexisting cubic-rhombohedral phase Ge3Sb2Te6 NWs exhibited an exclusively uniform superlattice structure consisting of 2.2 nm period slabs. The rhombohedral phase Ge3Sb8Te6 and Ge2Sb7Te4 NWs adopted an innovative structure; 3Sb(2) layers intercalated the Ge3Sb2Te6 and Ge2Sb1Te4 domains, respectively, producing 3.4 and 2.7 nm period slabs. The current-voltage measurement of the individual NW revealed that the vacancy layers of Ge8Sb2Te11 and Ge3Sb2Te6 decreased the electrical conductivity.

引用

页码：543 / 549

页数：7

共 35 条

[1] Phase-Change InSbTe Nanowires Grown in Situ at Low Temperature by Metal-Organic Chemical Vapor Deposition [J].