Liquid phase deposition film of tin oxide

被引:85
作者
Tsukuma, K [1 ]
Akiyama, T [1 ]
Imai, H [1 ]
机构
[1] KEIO UNIV,FAC SCI & TECHNOL,DEPT APPL CHEM,YOKOHAMA,KANAGAWA 223,JAPAN
关键词
D O I
10.1016/S0022-3093(96)00583-2
中图分类号
TQ174 [陶瓷工业]; TB3 [工程材料学];
学科分类号
0805 ; 080502 ;
摘要
The thin film of tin oxide was formed in the solution containing 0.005-0.3 mol/l SnF2. The procedure of film formation was very simple; the solution, in which a substrate is immersed, is maintained above 40 degrees C for tens of hours. In this method, the hydrolysis product of SnF2 deposited as the film on a substrate. As-deposition film included 6-16 mol% fluorine. The chemical component was deduced as SnO2-05xFx, where 0.17 <x <0.5. The film was modified to pure SnO, by heating above 300 degrees C. The electrical conductivity was improved to 1.4 x 10(-2) Omega cm by heating at 500 degrees C. The model of liquid phase deposition was proposed to extend another oxide film.
引用
收藏
页码:48 / 54
页数:7
相关论文
共 18 条
[1]   MOLECULAR MECHANISMS AND KINETICS DURING THE SELF-ASSEMBLY OF SURFACTANT LAYERS [J].
CHEN, YL ;
CHEN, S ;
FRANK, C ;
ISRAELACHVILI, J .
JOURNAL OF COLLOID AND INTERFACE SCIENCE, 1992, 153 (01) :244-265
[2]   SN(SB)-OXIDE SOL-GEL COATINGS ON GLASS [J].
GONZALEZOLIVER, CJR ;
KATO, I .
JOURNAL OF NON-CRYSTALLINE SOLIDS, 1986, 82 (1-3) :400-410
[3]  
INO H, 1989, Patent No. 193443
[4]  
INO H, 1988, Patent No. 1364667
[5]   CHEMICAL VAPOR-DEPOSITION OF ANTIMONY-DOPED TIN OXIDE-FILMS FORMED FROM DIBUTYL TIN DIACETATE [J].
KANE, J ;
SCHWEIZER, HP ;
KERN, W .
JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1976, 123 (02) :270-277
[6]  
KAWAHARA H, 1984, Patent No. 141441
[7]   PREPARATION AND PROPERTIES OF REACTIVELY CO-SPUTTERED TRANSPARENT CONDUCTING FILMS [J].
LEHMANN, HW ;
WIDMER, R .
THIN SOLID FILMS, 1975, 27 (02) :359-368
[9]  
NAGATA H, 1992, Patent No. 426516
[10]  
NAGATA H, 1991, Patent No. 285822