Hybrid integrated velocity matched travelling-wave InP/InGaAs photodetectors with silicon nitride waveguides

被引：0

作者：

Xu, Pengfei ^{[1
]}

Chen, Yujie ^{[1
]}

Shao, Zengkai ^{[1
]}

Zhang, Yanfeng ^{[1
]}

Zhang, Tianyou ^{[1
]}

Wu, Zeru ^{[1
]}

Yang, Chunchuan ^{[1
]}

Liu, Lin ^{[1
]}

Zhou, Lidan ^{[1
]}

Chen, Hui ^{[1
]}

Liu, Jie ^{[1
]}

Yu, Siyuan ^{[1
]}

机构：

[1] Sun Yat Sen Univ, Sch Elect & Informat Technol, State Key Lab Optoelect Mat & Technol, Guangzhou 510275, Guangdong, Peoples R China

来源：

2016 ASIA COMMUNICATIONS AND PHOTONICS CONFERENCE (ACP) | 2016年

基金：

高等学校博士学科点专项科研基金;

关键词：

D O I：

暂无

中图分类号：

O43 [光学];

学科分类号：

070207 ; 0803 ;

摘要：

Broad-bandwidth high-responsivity waveguide integrated photodetectors are key optoelectronic devices for on-chip photoelectric conversion and radio frequency (RF) signal demodulations. Here, a hybrid integrated InP/InGaAs travelling-wave photodetector based on slotline transmission line with velocity-matched bent silicon nitride (SiNx) optical waveguide is studied. Besides, the fabrication of the hybrid integrated TWPD device is demonstrated.

引用

页数：3

共 6 条

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