Growth of Vertical GaAs Nanowires on an Amorphous Substrate via a Fiber-Textured Si Platform

被引：33

作者：

Cohin, Yann ^{[1
,2
]}

Mauguin, Olivia ^{[1
]}

Largeau, Ludovic ^{[1
]}

Patriarche, Gilles ^{[1
]}

Glas, Frank ^{[1
]}

Sondergard, Elin ^{[2
]}

Harmand, Jean-Christophe ^{[1
]}

机构：

[1] CNRS, Lab Photon & Nanostruct, F-91460 Marcoussis, France

[2] CNRS St Gobain Rech, UMR 125, F-93303 Aubervilliers, France

来源：

NANO LETTERS | 2013年 / 13卷 / 06期

关键词：

Vertical nanowire; heteroepitaxy; GaAs; polycrystalline silicon; molecular beam epitaxy; ALUMINUM-INDUCED CRYSTALLIZATION; SOLAR-CELLS; SILICON; MODEL;

D O I：

10.1021/nl400924c

中图分类号：

O6 [化学];

学科分类号：

0703 ;

摘要：

We demonstrate the vertical self-catalyzed molecular beam epitaxy (MBE) growth of GaAs nanowires on an amorphous SiO2 substrate by using a smooth [111] fiber-textured silicon thin film with very large grains, fabricated by aluminum-induced crystallization. This generic platform paves the way to the use of inexpensive substrates for the fabrication of dense ensembles of vertically standing nanowires (NWs) with promising perspectives for the integration of NWs in devices.

引用

页码：2743 / 2747

页数：5

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