Epitaxially-stacked multiple-active-region 1.55 μm lasers for increased differential efficiency

Semiconductor lasers emitting at 1.55 mu m with external differential efficiencies >1 have been created by monolithically connecting several active regions in series within a single optical waveguide. This is accomplished by epitaxially stacking a number of p-i-n multiquantum well active regions with intermediate n(++)-p(++) back diodes, which enable the entire terminal current to flow through each active region stages in series. Such lasers should also improve the impedance match as well as provide for low-noise, high-efficiency microwave links. (C) 1999 American Institute of Physics. [S0003-6951(99)02422-5].