Production of HfB2-SiC (10-65 vol % SiC) Ultra-High-Temperature Ceramics by Hot Pressing of HfB2-(SiO2-C) Composite Powder Synthesized by the Sol-Gel Method

被引：35
|
作者：
Simonenko, E. P. [1 ]
Simonenko, N. P. [1 ]
Papynov, E. K. [2 ,3 ]
Gridasova, E. A. [3 ]
Sevastyanov, V. G. [1 ]
Kuznetsov, N. T. [1 ]
机构：
[1] Russian Acad Sci, Kurnakov Inst Gen & Inorgan Chem, Moscow 119991, Russia
[2] Russian Acad Sci, Inst Chem, Far Eastern Branch, Vladivostok 690022, Russia
[3] Far Eastern Fed Univ, Vladivostok 690950, Russia
来源：
RUSSIAN JOURNAL OF INORGANIC CHEMISTRY | 2018年 / 63卷 / 01期
基金：
俄罗斯科学基金会;
关键词：
LONG-TERM EXPOSURE; ZRB2-SIC COMPOSITE; SILICON-CARBIDE; MECHANICAL-PROPERTIES; DISSOCIATED AIR; THERMAL-PROPERTIES; ZRB2-SIC-GRAPHITE COMPOSITES; ZRB2-BASED COMPOSITES; ZIRCONIUM BORIDE; BEHAVIOR;
D O I：
10.1134/S0036023618010187
中图分类号：
O61 [无机化学];
学科分类号：
070301 ; 081704 ;
摘要：
The formation of HfB2-SiC (10-65 vol % SiC) ultra-high-temperature ceramics by hot pressing of HfB2-(SiO2-C) composite powder synthesized by the sol-gel method was studied. By the example of HfB2-30 vol % SiC ceramic, it was shown that the synthesis of nanocrystalline silicon carbide is completed at temperatures of as low as ae<yen>1700A degrees C (crystallite size 35-39 nm). The production of the composite materials with various contents of fine silicon carbide at 1800A degrees C demonstrated that the samples of the composition HfB2-SiC (20-30 vol % SiC) are characterized by the formation of SiC crystallites of the minimum sizes (36-38 nm), by the highest density (89%), and by higher oxidation resistance during heating in an air flow to 1400A degrees C.
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页码：1 / 15
页数：15
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