An 83% Enhancement in the External Quantum Efficiency of Ultraviolet Flip-Chip Light-Emitting Diodes With the Incorporation of a Self-Textured Oxide Mask

被引：21

作者：

Shen, Kun-Ching ^{[1
]}

Lin, Wen-Yu ^{[1
]}

Wuu, Dong-Sing ^{[1
,2
]}

Huang, Shih-Yung ^{[3
]}

Wen, Kuo-Sheng ^{[4
]}

Pai, Shih-Feng ^{[4
]}

Wu, Liang-Wen ^{[4
]}

Horng, Ray-Hua ^{[5
,6
]}

机构：

[1] Natl Chung Hsing Univ, Dept Mat Sci & Engn, Taichung 40227, Taiwan

[2] Da Yeh Univ, Dept Elect Engn, Changhua 51591, Taiwan

[3] Da Yeh Univ, Ctr Ind Acad Collaborat, Changhua 51591, Taiwan

[4] Formosa Epitaxy Inc, Tao Yuan 32542, Taiwan

[5] Natl Chung Hsing Univ, Grad Inst Precis Engn, Taichung 40227, Taiwan

[6] Natl Cheng Kung Univ, Adv Optoelect Technol Ctr, Tainan 70101, Taiwan

来源：

IEEE ELECTRON DEVICE LETTERS | 2013年 / 34卷 / 02期

关键词：

External quantum efficiency (EQE); GaN; light-emitting diode (LED); ultraviolet (UV) generation; OUTPUT POWER; PERFORMANCE; LEDS;

D O I：

10.1109/LED.2012.2228462

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

We demonstrate here a 380-nm ultraviolet InGaN flip-chip (FC) light-emitting diode (LED) with self-textured oxide mask (STOM-FCLED) structures fabricated in a large-area (1125 x 1125 mu m(2)) FC configuration. An 83% enhancement in the external quantum efficiency was achieved for the STOM-FCLEDs when compared with FCLEDs without the STOM structure operating at an injection current of 350 mA. For STOM-FCLEDs operating at an injection current of 1000 mA, a light output of approximately 400 mW was obtained. These results could be attributed to the introduction of the STOM structure, which not only reduces the density of threading dislocation but also intensifies the LED light extraction.

引用

页码：274 / 276

页数：3

共 16 条

[1] Origin of defect-insensitive emission probability in In-containing (Al, In, Ga) N alloy semiconductors [J].